Транзистор s9018

Содержание:

STS9012 Datasheet (PDF)
Биполярный транзистор KST9012C — описание производителя. Основные параметры. Даташиты.
KST9012C Datasheet (PDF)
S9012LT1 Datasheet (PDF)
Производители
KTC9012 Datasheet (PDF)
CD9012 Datasheet (PDF)
Биполярный транзистор L8050 — описание производителя. Основные параметры. Даташиты.
L8050 Datasheet (PDF)
KST9012 Datasheet (PDF)
KST9012C Datasheet (PDF)
Аналоги
MMBT9012 Datasheet (PDF)

STS9012 Datasheet (PDF)

1.1. sts9012.pdf Size:106K _auk

STS9012
Semiconductor
Semiconductor
PNP Silicon Transistor
Description
• General purpose application.
• Switching application.
Features
• Excellent hFE linearity.
• Complementary pair with STS9013
Ordering Information
Type NO. Marking Package Code
STS9012 STS9012 TO-92
Outline Dimensions unit : mm
3.45±0.1
4.5±0.1
2.25±0.1
0.4±0.02
2.06±0.1
1.27 Typ.
2.54

4.1. sts9013.pdf Size:197K _auk

STS9013
NPN Silicon Transistor
Descriptions
PIN Connection
• General purpose application.
C
• Switching application.
B
Features
• Excellent hFE linearity.
E
• Complementary pair with STS9012
TO-92
Ordering Information
Type NO. Marking Package Code
STS9013 STS9013 TO-92
Absolute maximum ratings (Ta=25°C)
Characteristic Symbol Ratings Unit
Collector-B

4.2. sts9015.pdf Size:97K _auk

STS9015
Semiconductor
Semiconductor
PNP Silicon Transistor
Description
• General purpose application.
• Switching application.
Features
• Excellent hFE linearity : hFE(IC=0.1mA) / hFE(IC=2mA) = 0.95(Typ.)
• Low noise : NF = 10dB(Max.)
• Complementary pair with STS9014
Ordering Information
Type NO. Marking Package Code
STS9015 STS9015 TO-92
Outline Dimensions uni

4.3. sts9014.pdf Size:207K _auk

STS9014
NPN Silicon Transistor
Description
PIN Connection
• General purpose application
C
• Switching application
Features
B
• Excellent hFE linearity : hFE(IC=0.1 mA) /
hFE(IC=2 mA) = 0.95(Typ.)
• Low noise : NF=10dB(Max.) at f=1KHz
E
• Complementary pair with STS9015
TO-92
Ordering Information
Type NO. Marking Package Code
STS9014 STS9014 TO-92
A

4.4. sts9018.pdf Size:232K _auk

STS9018
NPN Silicon Transistor
Description
PIN Connection
• High frequency low noise amplifier application
C
• VHF band amplifier application
B
Features
• Low noise figure : NF = 4dB(Max.) at f=100MHz
• High transition frequency fT = 800MHz(Typ.)
E
TO-92
Ordering Information
Type NO. Marking Package Code
STS9018 STS9018 TO-92
Absolute maximum ratings T

4.5. gsts9014lt1.pdf Size:221K _globaltech_semi

GSTS9014LT1
NPN General Purpose Transistor
Product Description Features
This device is designed as a general purpose Collector-Emitter Voltage : 45V
amplifier and switch. Collector Current : 100mA
Lead(Pb)-Free
Packages & Pin Assignments
SOT-23
Pin Description
1 Base
2 Emitter
3 Collector
Marking Information
P/N Package Rank Part Marking
GSTS9014LT1F SOT-23 Q 14Q

Биполярный транзистор KST9012C — описание производителя. Основные параметры. Даташиты.

Даташит 2sc2625 pdf ( datasheet )

Наименование производителя: KST9012C

Маркировка: 2TY.

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.3
W

Макcимально допустимое напряжение коллектор-база (Ucb): 40
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 0.5
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 150
MHz

Ёмкость коллекторного перехода (Cc): 5
pf

Статический коэффициент передачи тока (hfe): 144

Корпус транзистора: SOT23

KST9012C
Datasheet (PDF)

Транзистор s8050 чем заменить

1.1. kst9012c.pdf Size:137K _kexin

SMD Type Transistors
SMD Type IC
SMD Type
PNP Transistors
KST9012C
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
Features
Excellent hFE liearity
Collector Current :IC=-0.5A 12
+0.05
0.95+0.1
-0.1 0.1-0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO -40 V
Collector — Emitter Voltag

3.1. kst9012.pdf Size:925K _kexin

SMD Type or
SMD Type TransistICs
SMD Type
PNP Transistors
KST9012
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4 -0.1
3
Features
Excellent hFE liearity
Collector Current :IC=-0.5A 1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO -40 V
Collector — Emitter Volta

4.1. kst9015-d.pdf Size:1068K _kexin

SMD Type Transistors
SMD Type
PNP Transistors
KST9015-D
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
Features
Excellent hFE linearity
Collector Current :IC=-0.1A
1 2
Complementary to KST9014-D
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO -50 V
Collect

4.2. kst9013.pdf Size:987K _kexin

SMD Type TransistICs
SMD Type or
SMD Type
NPN Transistors
KST9013
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4 -0.1
3
Features
Excellent hFE linearity
Collector Current :IC=0.5A
1 2
+0.1
0.95-0.1 0.1+0.05
-0.01
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 40 V
Collector — Emitter Voltage

4.3. kst9014-d.pdf Size:1021K _kexin

SMD Type Transistors
SMD Type
NPN Transistors
KST9014-D
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4 -0.1
3
Features
Excellent hFE linearity
Collector Current :IC=0.1A
1 2
+0.05
0.95+0.1
-0.1 0.1 -0.01
Complementary to KST9015-D
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO 50 V
Collector-E

4.4. kst9013c.pdf Size:388K _kexin

SMD Type IC
SMD Type Transistors
SMD Type
NPN Transistors
KST9013C
SOT-23
Unit: mm
2.9+0.1
-0.1
+0.1
0.4-0.1
3
Features
Excellent hFE linearity
Collector Current :IC=0.5A
12
+0.1
+0.05
0.95-0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 40 V
Collector — Emitter Voltag

4.5. kst9015.pdf Size:971K _kexin

SMD Type Transistors
SMD Type
PNP Transistors
KST9015
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4-0.1
3
Features
Complementary to KST9014
1 2
+0.1
+0.05
0.95 -0.1 0.1 -0.01
+0.1
1.9 -0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO —

4.6. kst9014.pdf Size:925K _kexin

SMD Type Transistors
SMD Type
NPN Transistors
KST9014
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4 -0.1
3
Features
Excellent hFE linearity
Collector Current :IC=0.1A
1 2
+0.05
0.95+0.1
-0.1 0.1 -0.01
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter Symbol Rating Unit
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 45 V
Emit

4.7. kst9018.pdf Size:515K _kexin

SMD Type
SMD Type Tra n s i s to rs IC
SMD Type
NPN Transistors
KST9018
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4 -0.1
3
Features
■ Features
High current gain bandwidth product.
●
1 2
+0.1
+0.05
power dissipation.(PC=200mW) 0.95 -0.1 0.1 -0.01
●
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25 ℃
Parameter Symbol Rating Unit
Col

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

S9012LT1 Datasheet (PDF)

Характеристики транзистора s8050

1.1. s9012lt1.pdf Size:238K _wietron

S9012LT1
PNP General Purpose Transistors
3
P b Lead(Pb)-Free 1
2
SOT-23
Value
V
CEO -20
-40
-5
-500
300
2.4
417
S9012PLT1=12P S9012QLT1=12Q S9012RLT1=12R S9012SLT1=12S
-0.1
-20
-100 -40
-5.0
-100
u
-0.15
-35
-0.15 u
-4.0
WEITRON
1/2 28-Apr-2011
http://www.weitron.com.tw
S9012LT1
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characterist

1.2. s9012lt1.pdf Size:371K _shenzhen

Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SOT-23 Plastic-Encapsulate Transistors
SOT-23
1. BASE
S9012LT1 TRANSISTOR (PNP)
2. EMITTER
3. COLLECTOR
FEATURES
Power dissipation
2. 4
PCM: 0.3 W (Tamb=25℃)
1. 3
Collector current
ICM: -0.5 A
Collector-base voltage
V(BR)CBO: -40 V
Operating and storage junction temperature range
Unit: mm
TJ, Tst

3.1. s9012lt.pdf Size:939K _bruckewell

Bruckewell Technology Corp., Ltd.
PNP EPITAXIAL SILICON
TRANSISTOR
S9012LT
FEATURES
Excellent HFE Linearity HFE
hFE(2)=25(Min.) at VCE=6V ,Ic=400m
High Total Power Dissipation: Pc=225mW
MECHANICAL DATA
* Case: SOT-23 Molded plastic
* Epoxy: UL94V-O rate flame retardant
SOT-23
Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Ratings (T

Производители

DataSheet от транзистора S9012 можно скачать от фирм которые занимаются их производством: SeCoS Halbleitertechnologie, Galaxy Semi-Conductor Holdings, Jiangsu Changjiang Electronics Technology, Jiangsu High diode Semiconductor, KEC Semiconductor, Weitron Technology, Nanjing International Group, Tiger Electronic, SHENZHEN SLS TECHNOLOGY, Diode Semiconductor Korea, Daya Electric Group, SHIKE Electronics, SHENZHEN KOO CHIN ELECTRONICS, GUANGDONG HOTTECH INDUSTRIAL, DONGGUAN YOU FENG WEI ELECTRONICS, Shenzhen Jin Yu Semiconductor.

На отечественном рынке данные изделия представлены несколькими конторами: Weitron Technology, KEC Semiconductor.

KTC9012 Datasheet (PDF)

1.1. ktc9012s.pdf Size:395K _kec

SEMICONDUCTOR KTC9012S
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
L B L
FEATURES
DIM MILLIMETERS
Excellent hFE Linearity.
_
A 2.93 0.20
+
B 1.30+0.20/-0.15
Complementary to KTC9013S.
C 1.30 MAX
2
3 D 0.45+0.15/-0.05
E 2.40+0.30/-0.20
1
G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
MAXIMUM RATING (Ta=25 )
L 0.55
P

1.2. ktc9012.pdf Size:46K _kec

SEMICONDUCTOR KTC9012
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
·Excellent hFE Linearity.
·Complementary to KTC9013.
N DIM MILLIMETERS
A 4.70 MAX
E
K
B 4.80 MAX
G
C 3.70 MAX
D
D 0.45
E 1.00
MAXIMUM RATING (Ta=25℃)
F 1.27
G 0.85
CHARACTERISTIC SYMBOL RATING UNIT
H 0.45
_
H
J 14.00 + 0.50
VCBO -40

1.3. ktc9012sc.pdf Size:613K _kec

SEMICONDUCTOR KTC9012SC
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
·Excellent hFE Linearity.
·Complementary to KTC9013SC.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
VCBO -40 V
Collector-Base Voltage
VCEO -30 V
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage -5 V
IC
Collector Current -500 mA

CD9012 Datasheet (PDF)

1.1. cd9012.pdf Size:165K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR TRANSISTOR CD9012
TO-92
CBE
General Purpose Audio Amplifier Applications.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
Collector -Emitter Voltage VCEO 30 V
Collector -Base Voltage VCBO 40 V
Emitter Base Voltage VEBO 5.0 V
Collector Current IC 500 mA
Collector Power

5.1. cd9014.pdf Size:176K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTOR CD9014
TO-92
CBE
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
Collector -Emitter Voltage VCEO 50 V
Collector -Base Voltage VCBO 50 V
Emitter Base Voltage VEBO 5.0 V
Collector Current IC 100 mA
Collector Power Dissipation PC 625 mW
Operating And Storage J

5.2. cd9018.pdf Size:236K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTOR CD 9018
TO-92
Plastic Package
ABSOLUTE MAXIMUM RATINGS ( Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL VALUE UNIT
VCEO
Collector Emitter Voltage 15 V
VCBO
Collector Base Voltage 30 V
VEBO
Emitter Base Voltage 5V
IC
Collector Current 30 mA
PD
Power Di

5.3. cd9015.pdf Size:165K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR TRANSISTOR CD9015
TO-92
CBE
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
Collector -Emitter Voltage VCEO 50 V
Collector -Base Voltage VCBO 50 V
Emitter Base Voltage VEBO 5.0 V
Collector Current IC 100 mA
Collector Power Dissipation PC 625 mW
Operating And Storage J

5.4. cd9011.pdf Size:169K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTOR CD9011
TO-92
CBE
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
Collector -Emitter Voltage VCEO 30 V
Collector -Base Voltage VCBO 50 V
Emitter Base Voltage VEBO 5.0 V
Collector Current IC 100 mA
Power Dissipation PD 400 mW
Operating And Storage Junction Tj

5.5. cd9013.pdf Size:94K _cdil

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTOR CD9013
TO-92
Plastic Package
C
B
E
General Purpose Audio Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC Unless Otherwise Specified)
DESCRIPTION SYMBOL VALUE UNITS
VCEO
Collector Emitter Voltage 30 V
VCBO
Collector Base Voltage 40 V
VEBO
Emitter Base

Биполярный транзистор L8050 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: L8050

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 1
W

Макcимально допустимое напряжение коллектор-база (Ucb): 30
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V

Макcимальный постоянный ток коллектора (Ic): 1.5
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 100
MHz

Ёмкость коллекторного перехода (Cc): 15
pf

Статический коэффициент передачи тока (hfe): 85

Корпус транзистора: TO92

L8050
Datasheet (PDF)

1.1. l8050.pdf Size:597K _blue-rocket-elect

L8050(BR3DA8050K)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package.
特征 / Features
PC, IC 大,与 L8550(BR3CA8550K)互补。
High PC and IC, complementary pair with L8550(BR3CA8550K).
用途 / Applications
用于 2W 乙类推挽功放。
2W output amplifier of portable radios in cl

1.2. l8050m.pdf Size:407K _blue-rocket-elect

L8050M
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
与 L8550M 互补。
Complementary pair with L8550M.
用途 / Applications
用于功率放大电路。
Power amplifier applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2

1.3. l8050hplt1g.pdf Size:101K _lrc

LESHAN RADIO COMPANY, LTD.
L8050HQLTIG
General Purpose Transistors
Series
NPN Silicon S-L8050HQLTIG
FEATURE
Series
High current capacity in compact package.
IC =1.5 A.
3
Epitaxial planar type.
NPN complement: L8050H
Pb-Free Package is available.
1
S- Prefix for Automotive and Other Applications Requiring Unique Site
2
and Control Change Requirements; AEC-Q101 Qualified and

1.4. l8050hslt1g.pdf Size:83K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
L8050HQLTIG
NPN Silicon
Series
S-L8050HQLTIG
FEATURE
High current capacity in compact package.
Series
IC =1.5 A.
Epitaxial planar type.
3
NPN complement: L8050H
Pb-Free Package is available.
S- Prefix for Automotive and Other Applications Requiring Unique Site
1
and Control Change Requirements; AEC-Q101 Qualified and P

1.5. l8050qlt1g.pdf Size:70K _lrc

LESHAN RADIO COMPANY, LTD.
L8050PLT1G
General Purpose Transistors
Series
NPN Silicon
S-L8050PLT1G
FEATURE
Series
High current capacity in compact package.
IC = 0.8A.
Epitaxial planar type. 3
NPN complement: L8050
Pb-Free Package is available.
1
S- Prefix for Automotive and Other Applications Requiring Unique Site
2
and Control Change Requirements; AEC-Q101 Qualified and PPA

1.6. l8050plt1g.pdf Size:77K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
L8050PLT1G
Series
NPN Silicon
S-L8050PLT1G
FEATURE Series
High current capacity in compact package.
IC = 0.8A.
3
Epitaxial planar type.
NPN complement: L8050
Pb-Free Package is available.
1
S- Prefix for Automotive and Other Applications Requiring Unique Site
2
and Control Change Requirements; AEC-Q101 Qualified and PP

1.7. l8050hqlt1g.pdf Size:88K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
L8050HQLTIG
Series
NPN Silicon
S-L8050HQLTIG
FEATURE
Series
High current capacity in compact package.
IC =1.5 A.
3
Epitaxial planar type.
NPN complement: L8050H
Pb-Free Package is available.

1
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and

1.8. l8050hrlt1g.pdf Size:84K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
L8050HQLTIG
Series
NPN Silicon
S-L8050HQLTIG
FEATURE
High current capacity in compact package.
Series
IC =1.5 A.
Epitaxial planar type.
3
NPN complement: L8050H
Pb-Free Package is available.
S- Prefix for Automotive and Other Applications Requiring Unique Site
1
and Control Change Requirements; AEC-Q101 Qualified and P

KST9012 Datasheet (PDF)

1.1. kst9012c.pdf Size:137K _kexin

1.2. kst9012.pdf Size:925K _kexin

4.1. kst9015-d.pdf Size:1068K _kexin

4.2. kst9013.pdf Size:987K _kexin

4.3. kst9014-d.pdf Size:1021K _kexin

4.4. kst9013c.pdf Size:388K _kexin

4.5. kst9015.pdf Size:971K _kexin

4.6. kst9014.pdf Size:925K _kexin

4.7. kst9018.pdf Size:515K _kexin

KST9012C Datasheet (PDF)

1.1. kst9012c.pdf Size:137K _kexin

3.1. kst9012.pdf Size:925K _kexin

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Аналоги

Выбор аналога для КТ825Г зависит от схемы в которой он используется. В любом случае полной его копии не существует и прототип BDX88 уже не производится. При этом, для большинства ситуаций подходят такие импортные транзисторы: 2N6052, MJ11013, MJ11015, 2N5884

Для его замены в выходных каскадах усилителей, в первую очередь стоит обратить внимание на российский 2Т825А или на эквивалентную конструкцию их двух биполярников КТ814Г и КТ818В

Часто, для ремонта или модернизации популярного УНЧ Солнцева (Квод-405) вместо КТ825Г применяют зарубежные дарлингтоны: MJ11015, TIP147, BDV64B. При таком подходе в данном усилителе также рекомендуют поменять его комплементарник КТ827А и тоже на импортные аналоги. Соответственно подойдут: MJ11016, TIP142, BDV65B. Стоит учитывать, что коллекторный ток у двух последних значительно меньше (до 10 А), чем у рассматриваемого. Но при этом считается, что качество звука в этом случае будет на много лучше.

Бывают и другие случаи, когда вместо дорогого импортного транзистора дарлингтона довольно успешно применяют наш КТ825Г. Например, его нередко используют для замены мощных Т1829-1 и FW26025A1, которые установлены для регулировки напряжением на вентиляторах в автомобильных блоках управления отоплением Valeo 833817E.

MMBT9012 Datasheet (PDF)

1.1. mmbt9012.pdf Size:98K _utc

UTC MMBT9012 PNP EPITAXIAL SILICON TRANSISTOR
1W OUTPUT AMPLIFIER OF
POTABLE RADIOS IN CLASS B
PUSH-PULL OPERATION
FEATURES
2
*High total power dissipation. (625mW)
1
*High collector current. (-500mA)
*Excellent hFE linearity
*Complementary to UTC MMBT9013
3
MARKING
12
SOT-23
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specifie

1.2. mmbt9012lt1.pdf Size:135K _wej

RoHS
MMBT9012LT1
PNP EPITAXIAL SILICON TRANSISTOR
SOT-23
3
1W OUTPUT AMPLIFIER OF PORTABLE
1
RADIOS IN CLASS
B PUSH-PULL OPERATION
2
1.
1.BASE
Complement to 9013G
2.EMITTER
Collector Current :Ic=-500mA
2.4
3.COLLECTOR
1.3
High Total Power Dissipation Pc=225mW
Unit:mm
o
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Symbol Rating Unit
Characteristic
Collector-Base Voltage VCBO

3.1. mmbt9014.pdf Size:125K _utc

UNISONIC TECHNOLOGIES CO., LTD
MMBT9014 NPN SILICON TRANSISTOR
PRE-AMPLIFIER, LOW LEVEL
& LOW NOISE
FEATURES
* High Total Power Dissipation. (450mW)
* Excellent hFE Linearity.
* Complementary to UTC MMBT9015
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
MMBT9014G-x-AE3-R MMBT9014G-x-AE3-R SOT-23 E B C Tape Reel
MA

3.2. mmbt9013.pdf Size:144K _utc

UNISONIC TECHNOLOGIES CO., LTD
MMBT9013 NPN SILICON TRANSISTOR
1W OUTPUT AMPLIFIER OF
POTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION
FEATURES
*High total Power Dissipation. (625mW)
*High Collector Current. (500mA)
*Excellent hFE linearity.
*Complementary to UTC MMBT9012
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Normal Lead Free Halogen Fre

3.3. mmbt9015.pdf Size:94K _utc

UNISONIC TECHNOLOGIES CO., LTD
MMBT9015 PNP SILICON TRANSISTOR
PRE-AMPLIFIER, LOW LEVEL
& LOW NOISE
FEATURES
*High total power dissipation. (450mW)
*Excellent hFE linearity.
*Complementary to UTC MMBT9014
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
MMBT9015L-x-AE3-R MMBT9015G-x-AE3-R SOT-23 E B C Tape Reel
MARKI

3.4. mmbt9018.pdf Size:106K _utc

UNISONIC TECHNOLOGIES CO., LTD
MMBT9018 NPN SILICON TRANSISTOR
AM/FM AMPLIFIER, LOCAL
3
OSCILLATOR OF FM/VHF
TUNER
1
2
SOT-23
 FEATURES
* High Current Gain Bandwidth Product
3
f T = 1.1GHz (Typ)
1
2
SOT-523
 ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Plating Halogen Free 1 2 3
MMBT9018L-x-AE3-R MMBT9018G-x-AE3-R SOT-23 E B

3.5. mmbt9015lt1.pdf Size:135K _wej

RoHS
MMBT9015LT1
PNP EPITAXIAL SILICON TRANSISTOR
SOT-23
3
LOW FREQRENCY,LOW NOISE AMPLIFIER
1
Complemen to MMPT9014LT1
Collector-current:Ic=-100mA
2
Collector-Emiller Voltage:VCE=-45V
1.
1.BASE
2.EMITTER
2.4
3.COLLECTOR
1.3
Unit:mm
o
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Symbol Rating Unit
Characteristic
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage V
V

3.6. mmbt9013lt1.pdf Size:138K _wej

RoHS
MMBT9013LT1
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
3
1W OUTPUT AMPLIFIER OF PORTABLE
1
RADIOS IN CLASS
B PUSH-PULL OPERATION
2
1.
1.BASE
Complement to 9012
2.EMITTER
Collector Current :Ic=500mA
2.4
3.COLLECTOR
1.3
High Total Power Dissipation Pc=225mW
Unit:mm
o
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Symbol Rating Unit
Characteristic
Collector-Base Voltage VCBO 40

3.7. mmbt9014lt1.pdf Size:136K _wej

RoHS
MMBT9014LT1
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
3
PRF-AMPLIFIER,LOW LEVEL&LOW NOISE
1
Complemen to MMPT9015LT1
Collector-current:Ic=100mA
2
Collector-Emiller Voltage:VCE=45V
1.
1.BASE
High Totalpower Dissipation Pc=225mW
2.EMITTER
High life And Good Linearity
2.4
3.COLLECTOR
1.3
Unit:mm
o
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Symbol Rating Unit
Characterist

3.8. mmbt9018lt1.pdf Size:129K _wej

RoHS
MMBT9018LT1
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
3
AM/FM IF AMPLIFIER,LOCAL OSCILATOR
1
OF FM/VHF TUNER
High Current Gain Bandwidth
2
Product fT=1100MHz
1.
1.BASE
2.EMITTER
2.4
3.COLLECTOR
1.3
Unit:mm
o
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Symbol Rating Unit
Characteristic
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage V
VCEO 15
V
Emitter-Base Vol