Даташит 2sc2625 pdf ( datasheet )

Биполярный транзистор 2SC2630 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC2630

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 100
W

Макcимально допустимое напряжение коллектор-база (Ucb): 35
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 17
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 4
V

Макcимальный постоянный ток коллектора (Ic): 14
A

Предельная температура PN-перехода (Tj): 175
°C

Граничная частота коэффициента передачи тока (ft): 175
MHz

Статический коэффициент передачи тока (hfe): 10

Корпус транзистора: XM5

2SC2630
Datasheet (PDF)

1.1. 2sc2630.pdf Size:135K _mitsubishi

4.1. 2sc2639.pdf Size:127K _toshiba



4.2. 2sc2638.pdf Size:128K _toshiba



 4.3. 2sc2632.pdf Size:34K _panasonic

Transistor
2SC2632
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
Unit: mm
Complementary to 2SA1124
5.9± 0.2 4.9± 0.2
Features
Satisfactory linearity of forward current transfer ratio hFE.
High collector to emitter voltage VCEO.
Small collector output capacitance Cob.
0.7± 0.1
2.54± 0.15
Absolute Maximum Ratings (Ta=25˚C)
Parameter Sy

4.4. 2sc2632 e.pdf Size:38K _panasonic

Transistor
2SC2632
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
Unit: mm
Complementary to 2SA1124
5.9± 0.2 4.9± 0.2
Features
Satisfactory linearity of forward current transfer ratio hFE.
High collector to emitter voltage VCEO.
Small collector output capacitance Cob.
0.7± 0.1
2.54± 0.15
Absolute Maximum Ratings (Ta=25˚C)
Parameter Sy

 4.5. 2sc2634 e.pdf Size:42K _panasonic

Transistor
2SC2634
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
Complementary to 2SA1127
5.0± 0.2 4.0± 0.2
Features
Low noise voltage NV.
High foward current transfer ratio hFE.
Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit
+0.2 +0.2
Collector to base voltage VCBO 60 V 0.45 –0.1 0.45 –0.1
1.27 1.27
Collector to

4.6. 2sc2636 e.pdf Size:59K _panasonic

Transistor
2SC2636
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation
Unit: mm
6.9± 0.1 2.5± 0.1
1.5
1.5 R0.9 1.0
Features
R0.9
High transition frequency fT.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
0.85
Absolute Maximum Ratings (Ta=25˚C)
0.55± 0.1 0.45± 0.05
Paramete

4.7. 2sc2631 e.pdf Size:38K _panasonic

Transistor
2SC2631
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
Unit: mm
Complementary to 2SA1123
5.0± 0.2 4.0± 0.2
Features
Satisfactory linearity of forward current transfer ratio hFE.
High collector to emitter voltage VCEO.
Small collector output capacitance Cob.
Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit
+0.2

4.8. 2sc2631.pdf Size:34K _panasonic

Transistor
2SC2631
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
Unit: mm
Complementary to 2SA1123
5.0± 0.2 4.0± 0.2
Features
Satisfactory linearity of forward current transfer ratio hFE.
High collector to emitter voltage VCEO.
Small collector output capacitance Cob.
Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit
+0.2

4.9. 2sc2634.pdf Size:38K _panasonic

Transistor
2SC2634
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
Complementary to 2SA1127
5.0± 0.2 4.0± 0.2
Features
Low noise voltage NV.
High foward current transfer ratio hFE.
Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit
+0.2 +0.2
Collector to base voltage VCBO 60 V 0.45 –0.1 0.45 –0.1
1.27 1.27
Collector to

4.10. 2sc2636.pdf Size:126K _panasonic



Другие транзисторы… 2SC2623
, 2SC2624
, 2SC2625
, 2SC2626
, 2SC2627
, 2SC2628
, 2SC2629
, 2SC263
, B772
, 2SC2631
, 2SC2632
, 2SC2633
, 2SC2634
, 2SC2635
, 2SC2636
, 2SC2637
, 2SC2638
.

2SC2621 Datasheet (PDF)

1.1. 2sc2621 3da2621.pdf Size:231K _foshan

2SC2621(3DA2621) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于彩电色度信号输出。
Purpose: Color TV chroma output applications.
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V 300 V
CBO
V 300 V
CEO
V 6.5 V
EBO
I 200 mA
C
I 700 mA
CP
P (Ta=25℃) 1.2 W
C
P (Tc=25℃) 10 W
C
T 150 ℃

4.1. 2sc2626.pdf Size:101K _fuji

Fuji Semiconductor, Inc. — P.O. Box 702708 — Dallas, TX 75370 — 972-733-1700 — www.fujisemiconductor.com

4.2. 2sc2620.pdf Size:24K _hitachi

2SC2620
Silicon NPN Epitaxial Planar
Application
VHF amplifier, Local oscillator
Outline
MPAK
3
1
1. Emitter
2. Base
2
3. Collector
2SC2620
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 30 V
Collector to emitter voltage VCEO 20 V
Emitter to base voltage VEBO 4V
Collector current IC 20 mA
Collector power dissipation PC 100 mW
J

 4.3. 2sc2628.pdf Size:138K _mitsubishi

4.4. 2sc2627.pdf Size:135K _mitsubishi

 4.5. 2sc2629.pdf Size:135K _mitsubishi

4.6. 2sc2625.pdf Size:129K _mospec

A
A
A

4.7. 2sc2625b.pdf Size:238K _nell

RoHS
2SC2625B RoHS
SEMICONDUCTOR
Nell High Power Products
Silicon NPN triple diffusion planar transistor
(High voltage switching transistor)
10A/400V/80W
15.6±0.4
4.8±0.2
9.6
2.0±0.1
Φ3.2±0,1
TO-3P(B)
2
3
FEATURES
+0.2
+0.2
0.65
1.05
-0.1
-0.1
High-speed switching
High collector to base voltage VCBO
5.45±0.1 5.45±0.1
1.4
Satisfactory linearity of foward cur

4.8. 2sc2620.pdf Size:337K _kexin

SMD Type Transistors
NPN Transistors
2SC2620
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=20mA
1 2
● Collector Emitter Voltage VCEO=20V
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 30
Collect

2SC2625 Datasheet (PDF)

1.1. 2sc2625.pdf Size:129K _mospec

A
A
A

1.2. 2sc2625b.pdf Size:238K _nell

RoHS
2SC2625B RoHS
SEMICONDUCTOR
Nell High Power Products
Silicon NPN triple diffusion planar transistor
(High voltage switching transistor)
10A/400V/80W
15.6±0.4
4.8±0.2
9.6
2.0±0.1
Φ3.2±0,1
TO-3P(B)
2
3
FEATURES
+0.2
+0.2
0.65
1.05
-0.1
-0.1
High-speed switching
High collector to base voltage VCBO
5.45±0.1 5.45±0.1
1.4
Satisfactory linearity of foward cur

 4.1. 2sc2626.pdf Size:101K _fuji

Fuji Semiconductor, Inc. — P.O. Box 702708 — Dallas, TX 75370 — 972-733-1700 — www.fujisemiconductor.com

4.2. 2sc2620.pdf Size:24K _hitachi

2SC2620
Silicon NPN Epitaxial Planar
Application
VHF amplifier, Local oscillator
Outline
MPAK
3
1
1. Emitter
2. Base
2
3. Collector
2SC2620
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 30 V
Collector to emitter voltage VCEO 20 V
Emitter to base voltage VEBO 4V
Collector current IC 20 mA
Collector power dissipation PC 100 mW
J

 4.3. 2sc2628.pdf Size:138K _mitsubishi

4.4. 2sc2627.pdf Size:135K _mitsubishi

 4.5. 2sc2629.pdf Size:135K _mitsubishi

4.6. 2sc2620.pdf Size:337K _kexin

SMD Type Transistors
NPN Transistors
2SC2620
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=20mA
1 2
● Collector Emitter Voltage VCEO=20V
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 30
Collect

4.7. 2sc2621 3da2621.pdf Size:231K _foshan

2SC2621(3DA2621) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于彩电色度信号输出。
Purpose: Color TV chroma output applications.
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V 300 V
CBO
V 300 V
CEO
V 6.5 V
EBO
I 200 mA
C
I 700 mA
CP
P (Ta=25℃) 1.2 W
C
P (Tc=25℃) 10 W
C
T 150 ℃

2SC3320 Datasheet (PDF)

1.1. 2sc3320.pdf Size:191K _utc

UNISONIC TECHNOLOGIES CO.,LTD
2SC3320 NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE HIGH SPEED
SWITCHING
 FEATURES
* High voltage, high speed switching
* High reliability
 ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
2SC3320L-x-T3P-T 2SC3320L-x-T3P-T TO-3P B C E Tube
2SC3320L-x-T3N-T 2SC3320L-x-T3N-T TO-3PN B C E T

1.2. 2sc3320.pdf Size:109K _fuji

Fuji Semiconductor, Inc. — P.O. Box 702708 — Dallas, TX 75370 — 972-733-1700 — www.fujisemiconductor.com

 1.3. 2sc3320b.pdf Size:230K _nell

RoHS
RoHS
2SC3320B
SEMICONDUCTOR
Nell High Power Products
Silicon NPN triple diffusion planar transistor
(High voltage switching transistor)
15A/400V/150W
15.6±0.4
4.8±0.2
9.6
2.0±0.1
Φ3.2±0,1
TO-3P(B)
2
3
+0.2
+0.2
0.65
1.05
-0.1
-0.1
FEATURES
5.45±0.1 5.45±0.1
1.4
High-speed switching
B C E
High collector to base voltage, VCBO
Satisfactory linearity of fow

2SC5589 Datasheet (PDF)

1.1. 2sc5589.pdf Size:298K _toshiba

2SC5589
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5589
HORIZONTAL DEFLECTION OUTPUT FOR
HIGH RESOLUTION DISPLAY, COLOR TV
Unit: mm
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t (2) = 0.1 µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Co

4.1. 2sc5588.pdf Size:331K _toshiba

2SC5588
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5588
Unit: mm
HORIZONTAL DEFLECTION OUTPUT FOR SUPER
HIGH RESOLUTION DISPLAY
COLOR TV FOR DIGITAL TV & HDTV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1700 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t (2) = 0.1µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTER

4.2. 2sc5587.pdf Size:332K _toshiba

2SC5587
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5587
HORIZONTAL DEFLECTION OUTPUT FOR HIGH
Unit: mm
RESOLUTION
DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t (2) = 0.1 µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT

 4.3. 2sc5585 2sc5663.pdf Size:68K _rohm

2SC5585 / 2SC5663
Transistors
Low frequency transistor (12V, 0.5A)
2SC5585 / 2SC5663
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
External dimensions (Unit : mm)
Applications
For switching
2SC5585
For muting
(1)
(2)
(3)
0.8
Features
1.6
1) High current.
2) Low VCE(sat).
0.1Min.
(1) Emitter

4.4. 2sc5584.pdf Size:45K _panasonic

Power Transistors
2SC5584
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
20.0±0.5 5.0±0.3
(3.0)
φ 3.3±0.2
Features
• High breakdown voltage, and high reliability through the use of a
glass passivation layer
(1.5)
• High-speed switching
• Wide area of safe operation (ASO) (1.5)
2.0±0.3
2.7±0.3
3.0±0.3
1.0±0.2
Absolute Maximum Ra

 4.5. 2sc5580.pdf Size:43K _panasonic

Transistors
2SC5580
Silicon NPN epitaxial planer type
Unit: mm
For high-frequency oscillation / switching
0.3+0.1 0.15+0.10
–0.05
–0.0
3
Features
• High transition frequency fT
• S-mini type package, allowing downsizing of the equipment and
1 2
automatic insertion through the tape packing and the magazine
(0.65) (0.65)
packing.
1.3±0.1
2.0±0.2
10°
Absolute Maximu

4.6. 2sc5383 2sc5583.pdf Size:46K _panasonic

Power Transistors
2SC5583
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
20.0±0.5 5.0±0.3
(3.0)
φ 3.3±0.2
Features
• High breakdown voltage, and high reliability through the use of a
glass passivation layer
(1.5)
• High-speed switching
• Wide area of safe operation (ASO) (1.5)
2.0±0.3
2.7±0.3
3.0±0.3
1.0±0.2
Absolute Maximum Ra

4.7. 2sc5585.pdf Size:198K _secos

2SC5585
0.5A , 15V
NPN Silicon General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
SOT-523
FEATURES
High Current.
Low VCE(sat). VCE(sat)≦0.25V (@IC=200mA / IB=10mA)
A
Complement of 2SC4738. M
3
3
Top View C B
Application
1
1 2
General Purpose Amplification.
L 2
K
E
MARKING
D
H

4.8. 2sc5586 2sc5830 2sc5924.pdf Size:1332K _sanken-ele

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4.9. 2sc5585.pdf Size:204K _lge

 2SC5585
SOT-523 Transistor(NPN)
1. BASE
SOT-523
2. EMITTER
3. COLLECTOR
Features

High current.

Low VCE(sat). VCE(sat)≤250mV at IC = 200mA / IB = 10mA
MARKING: BX
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector- Base Voltage 15 V
VCEO Collector-Emitter Voltage 12 V
VEBO Emitter-B

4.10. 2sc5585.pdf Size:192K _wietron

2SC5585
NPN TRANSISTOR
3
P b Lead(Pb)-Free
1
2
FEATURES:
SOT-523(SC-75)
* High current.
* Low VCE(sat). VCE(sat).250mV at IC = 200mA / IB = 10mA
MAXIMUM RATINGS (TA=25°Cunless otherwise noted)
Parameter Symbol Value Units
Collector-Base Voltage VCBO 15 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 6 V
Collector Current –Continuous IC 500 mA
Collector Dissipa

2SC2624 Datasheet (PDF)

4.1. 2sc2626.pdf Size:101K _fuji

Fuji Semiconductor, Inc. — P.O. Box 702708 — Dallas, TX 75370 — 972-733-1700 — www.fujisemiconductor.com

4.2. 2sc2620.pdf Size:24K _hitachi

2SC2620
Silicon NPN Epitaxial Planar
Application
VHF amplifier, Local oscillator
Outline
MPAK
3
1
1. Emitter
2. Base
2
3. Collector
2SC2620
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 30 V
Collector to emitter voltage VCEO 20 V
Emitter to base voltage VEBO 4V
Collector current IC 20 mA
Collector power dissipation PC 100 mW
J

 4.3. 2sc2628.pdf Size:138K _mitsubishi

4.4. 2sc2627.pdf Size:135K _mitsubishi

 4.5. 2sc2629.pdf Size:135K _mitsubishi

4.6. 2sc2625.pdf Size:129K _mospec

A
A
A

4.7. 2sc2625b.pdf Size:238K _nell

RoHS
2SC2625B RoHS
SEMICONDUCTOR
Nell High Power Products
Silicon NPN triple diffusion planar transistor
(High voltage switching transistor)
10A/400V/80W
15.6±0.4
4.8±0.2
9.6
2.0±0.1
Φ3.2±0,1
TO-3P(B)
2
3
FEATURES
+0.2
+0.2
0.65
1.05
-0.1
-0.1
High-speed switching
High collector to base voltage VCBO
5.45±0.1 5.45±0.1
1.4
Satisfactory linearity of foward cur

4.8. 2sc2620.pdf Size:337K _kexin

SMD Type Transistors
NPN Transistors
2SC2620
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=20mA
1 2
● Collector Emitter Voltage VCEO=20V
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 30
Collect

4.9. 2sc2621 3da2621.pdf Size:231K _foshan

2SC2621(3DA2621) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于彩电色度信号输出。
Purpose: Color TV chroma output applications.
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V 300 V
CBO
V 300 V
CEO
V 6.5 V
EBO
I 200 mA
C
I 700 mA
CP
P (Ta=25℃) 1.2 W
C
P (Tc=25℃) 10 W
C
T 150 ℃

2SC2625B Datasheet (PDF)

1.1. 2sc2625b.pdf Size:238K _nell

RoHS
2SC2625B RoHS
SEMICONDUCTOR
Nell High Power Products
Silicon NPN triple diffusion planar transistor
(High voltage switching transistor)
10A/400V/80W
15.6±0.4
4.8±0.2
9.6
2.0±0.1
Φ3.2±0,1
TO-3P(B)
2
3
FEATURES
+0.2
+0.2
0.65
1.05
-0.1
-0.1
High-speed switching
High collector to base voltage VCBO
5.45±0.1 5.45±0.1
1.4
Satisfactory linearity of foward cur

3.1. 2sc2625.pdf Size:129K _mospec

A
A
A

 4.1. 2sc2626.pdf Size:101K _fuji

Fuji Semiconductor, Inc. — P.O. Box 702708 — Dallas, TX 75370 — 972-733-1700 — www.fujisemiconductor.com

4.2. 2sc2620.pdf Size:24K _hitachi

2SC2620
Silicon NPN Epitaxial Planar
Application
VHF amplifier, Local oscillator
Outline
MPAK
3
1
1. Emitter
2. Base
2
3. Collector
2SC2620
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 30 V
Collector to emitter voltage VCEO 20 V
Emitter to base voltage VEBO 4V
Collector current IC 20 mA
Collector power dissipation PC 100 mW
J

 4.3. 2sc2628.pdf Size:138K _mitsubishi

4.4. 2sc2627.pdf Size:135K _mitsubishi

 4.5. 2sc2629.pdf Size:135K _mitsubishi

4.6. 2sc2620.pdf Size:337K _kexin

SMD Type Transistors
NPN Transistors
2SC2620
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=20mA
1 2
● Collector Emitter Voltage VCEO=20V
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 30
Collect

4.7. 2sc2621 3da2621.pdf Size:231K _foshan

2SC2621(3DA2621) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于彩电色度信号输出。
Purpose: Color TV chroma output applications.
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V 300 V
CBO
V 300 V
CEO
V 6.5 V
EBO
I 200 mA
C
I 700 mA
CP
P (Ta=25℃) 1.2 W
C
P (Tc=25℃) 10 W
C
T 150 ℃

2SC2625 Datasheet Download — UTC

Номер произв 2SC2625
Описание HIGH VOLTAGE HIGH SPEED SWITCHING
Производители UTC
логотип  
1Page

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UNISONIC TECHNOLOGIES CO.,LTD
2SC2625
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE HIGH
SPEED SWITCHING
FEATURES
* High voltage, high speed switching
* High reliability
1
TO-3P
www.DataSheet4U.com
*Pb-free plating product number: 2SC2625L
PIN INFORMATION
PIN NO.
PIN NAME
1 Base
2 Collector
3 Emitter
ORDERING INFORMATION
Order Number
Normal
Lead free plating
2SC2625-T3P-T 2SC2625L-T3P-T
Package
TO-3P
Packing
Tube
www.unisonic.com.tw
Copyright 2005 Unisonic Technologies Co.,LTD
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2SC2625
NPN EPITAXIAL SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (TC=25 )

PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL

VCBO

VCEO

VCEO(SUS)

VEBO

IC

IB

PD

TJ

TSTG

RATINGS
450
400
400
7
10
3
80
+150
-40 ~ +150
UNIT
V
V
V
V
A
A
W

ELECTRICAL SPECIFICATIONS (TC =25 , Unless Otherwise Specified)

PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector-Emitter Saturation Voltage
Base Emitter Saturation Voltage
Collector
Cut-off Current
Emitter Cut-off Current
DC Current Gain
Switching Time
SYMBOL

VCBO

VCEO

VCEO (SUS)

VEBO

VCE (Sat)

VBE (Sat)

ICBO

IEBO

hFE

tON

tSTG

tF

TEST CONDITIONS

ICBO=1mA

ICEO=10mA

IC=1A

IEBO=0.1mA

IC=4A, IB=0.8A

VCBO=450V

VEBO=7V

IC=4A, VCE=5V

IC=7.5A, IB1=-IB2=1.5A

RL=20Ω, Pw=20µs, Duty ≤ 2%

MIN
450
400
400
7
10
TYP
MAX
1.2
1.5
1.0
0.1
UNIT
V
V
V
V
V
V
mA
mA
1.0 µs
2.0 µs
1.0 µs
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance Junction to Case
SYMBOL
JC
RATINGS
1.55
UNIT
/W
SWITCHING TIME TEST CIRCUIT

RL=20

IB1 IC

IB 2

IB 1

IB2

PW=20 s

0.9IC

0.1IC

IC

ton tstg tf

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2SC2625

TYPICAL CHARACTERISTICS
14
12
10
8
6
4
2

Collector Output Characteristics
900mA
700mA
500mA

TC=25

300mA
200mA

IB =100mA

2 4 6 8 10 12

CollectorEmitter Voltage, VCE (V)

14
3
1
0.5
0.3
0.1
0.05
0.03
Base and Collector Saturation Voltage

VBE(sat)

TC=25

IC=5IB

VCE(sat )

0.01
0.03 0.05 0.1
0.3 0.5 1
3 5 10

CollectorCurrent, IC (A)

Switching Time

3 TC=25

tSTG IC=5IB1 =5IB2

1

0.5 tON

0.3 tF

NPN EPITAXIAL SILICON TRANSISTOR
DC Current Gain
300
200
100

50 TC=120

30 25

-20

10 -40

5
3

VCE=5V

1
0.03 0.05 0.1
0.3 0.5 1
3 5 10

Collector Current, IC (A)

Safe Operating Area
30

TC=25

10 Single Pulse

5
3
1
0.5
0.3
50 s
100 s
200 s
500 s

PW=1ms

0.1
0.05
0.03
1
3 5 10
30 50 100 300 500

CollectorEmitter Voltage, VCE (V)

0.1
0.3 0.5
1 35

CollectorCurrent, IC (A)

10
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SC2626 Datasheet (PDF)

1.1. 2sc2626.pdf Size:101K _fuji

Fuji Semiconductor, Inc. — P.O. Box 702708 — Dallas, TX 75370 — 972-733-1700 — www.fujisemiconductor.com

4.1. 2sc2620.pdf Size:24K _hitachi

2SC2620
Silicon NPN Epitaxial Planar
Application
VHF amplifier, Local oscillator
Outline
MPAK
3
1
1. Emitter
2. Base
2
3. Collector
2SC2620
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 30 V
Collector to emitter voltage VCEO 20 V
Emitter to base voltage VEBO 4V
Collector current IC 20 mA
Collector power dissipation PC 100 mW
J

4.2. 2sc2628.pdf Size:138K _mitsubishi

 4.3. 2sc2627.pdf Size:135K _mitsubishi

4.4. 2sc2629.pdf Size:135K _mitsubishi

 4.5. 2sc2625.pdf Size:129K _mospec

A
A
A

4.6. 2sc2625b.pdf Size:238K _nell

RoHS
2SC2625B RoHS
SEMICONDUCTOR
Nell High Power Products
Silicon NPN triple diffusion planar transistor
(High voltage switching transistor)
10A/400V/80W
15.6±0.4
4.8±0.2
9.6
2.0±0.1
Φ3.2±0,1
TO-3P(B)
2
3
FEATURES
+0.2
+0.2
0.65
1.05
-0.1
-0.1
High-speed switching
High collector to base voltage VCBO
5.45±0.1 5.45±0.1
1.4
Satisfactory linearity of foward cur

4.7. 2sc2620.pdf Size:337K _kexin

SMD Type Transistors
NPN Transistors
2SC2620
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=20mA
1 2
● Collector Emitter Voltage VCEO=20V
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 30
Collect

4.8. 2sc2621 3da2621.pdf Size:231K _foshan

2SC2621(3DA2621) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于彩电色度信号输出。
Purpose: Color TV chroma output applications.
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V 300 V
CBO
V 300 V
CEO
V 6.5 V
EBO
I 200 mA
C
I 700 mA
CP
P (Ta=25℃) 1.2 W
C
P (Tc=25℃) 10 W
C
T 150 ℃

2SC2655 Datasheet (PDF)

1.1. 2sc2655.pdf Size:148K _toshiba

2SC2655
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2655
Industrial Applications
Power Amplifier Applications
Unit: mm
Power Switching Applications
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
• High collector power dissipation: PC = 900 mW
• High-speed switching: tstg = 1.0 μs (typ.)
• Complementary to 2SA1020.
Absolute Maximum

1.2. 2sc2655l-y.pdf Size:385K _mcc

MCC
Micro Commercial Components
TM 2SC2655L-O
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
2SC2655L-Y
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Halogen free available upon request by adding suffix «-HF»
• Collector of 0.9Watts of Power Dissipation. NPN
• Collector-current 2.0A
Plastic-Encapsulate
• Operating and storage junction temper

 1.3. 2sc2655l-o.pdf Size:385K _mcc

MCC
Micro Commercial Components
TM 2SC2655L-O
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
2SC2655L-Y
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Halogen free available upon request by adding suffix «-HF»
• Collector of 0.9Watts of Power Dissipation. NPN
• Collector-current 2.0A
Plastic-Encapsulate
• Operating and storage junction temper

1.4. 2sc2655-o.pdf Size:405K _mcc

MCC
Micro Commercial Components
TM 2SC2655-O
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
2SC2655-Y
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Halogen free available upon request by adding suffix «-HF»
• Collector of 0.9Watts of Power Dissipation. NPN
• Collector-current 2.0A
Plastic-Encapsulate
• Operating and storage junction temperat

 1.5. 2sc2655-y.pdf Size:405K _mcc

MCC
Micro Commercial Components
TM 2SC2655-O
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
2SC2655-Y
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Halogen free available upon request by adding suffix «-HF»
• Collector of 0.9Watts of Power Dissipation. NPN
• Collector-current 2.0A
Plastic-Encapsulate
• Operating and storage junction temperat

1.6. 2sc2655.pdf Size:254K _utc

UNISONIC TECHNOLOGIES CO., LTD
2SC2655 NPN SILICON TRANSISTOR
POWER AMPLIFIER
APPLICATIONS POWER
SWITCHING APPLICATIONS
FEATURES
* Low saturation voltage: VCE(SAT)= 0.5V (Max.)
* High speed switching time: TSTG=1.0μs (Typ.)
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
2SC2655L-x-AE3-R 2SC2655G-x-AE3-R SOT-23 E B C

1.7. 2sc2655.pdf Size:212K _secos

2SC2655
2A , 50V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92MOD
FEATURES
 Low saturation voltage:VCE(sat)=0.5V(Max)(IC=1A)
A
D
 High speed switching time:tstg=1μs(Typ.)
B
 Complementary to 2SA1020
K
E
F
CLASSIFICATION OF hFE (1)
C
Product-Rank 2SC2655-O

1.8. 2sc2655 to-92l.pdf Size:251K _lge

 2SC2655
TO-92L Transistor (NPN)
TO-92L
1.EMITTER
2.COLLECTOR
3.BASE
4.700
2 3
5.100
1
Features
Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A)
7.800
High speed switching time: tstg=1μs(Typ.) 8.200
Complementary to 2SA1020

0.600
0.800
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
0.350
Symbol Parameter Symbol Units
0.550
13.800
VCBO Collector-Base Vo

1.9. 2sc2655 to-92mod.pdf Size:276K _lge

 2SC2655
TO-92MOD Transistor (NPN)
1.EMITTER
TO-92MOD
1
2
2.COLLECTOR
3
3.BASE
Features
5.800
Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A)
6.200
High speed switching time: tstg=1μs(Typ.)
Complementary to 2SA1020
8.400
8.800
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
0.900
1.100
Symbol Parameter Symbol Units
0.400
0.600
VCBO Collector-Base Voltag

1.10. 2sc2655.pdf Size:277K _wietron

2SC2655
NPN General Purpose Transistors
P b Lead(Pb)-Free
1
2
3
1.EMITTER
3.BASE
2.COLLECTOR
TO-92MOD
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO V
Ic=100μA,IE=0 50
Collector-emitter breakdown voltage V(BR)CEO V
Ic=10mA,IB=0 50
Emitter-base breakdown voltag

2SC5252 Datasheet (PDF)

1.1. 2sc5252.pdf Size:38K _hitachi

2SC5252
Silicon NPN Triple Diffused Planar
ADE-208-391A (Z)
2nd. Edition
Application
Character display horizontal deflection output
Features
• High breakdown voltage
VCBO = 1500 V
• High speed switching
tf ≤ 0.15 µsec(typ.)
• Isolated package
TO–3P•FM
Outline
TO-3PFM
1. Base
2. Collector
3. Emitter
1
2
3
2SC5252
Absolute Maximum Ratings (Ta = 25°C)
Item Sym

4.1. 2sc5255.pdf Size:180K _toshiba

2SC5255
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5255
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure: NF = 1.5dB (f = 2 GHz)
• High gain: Gain = 8.5dB (f = 2 GHz)
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 15 V
Collector-emitter voltage VCEO 7 V
Emitter-base voltage VEBO 1

4.2. 2sc5256ft.pdf Size:104K _toshiba



 4.3. 2sc5257.pdf Size:126K _toshiba



4.4. 2sc5256.pdf Size:164K _toshiba



 4.5. 2sc5259.pdf Size:182K _toshiba



4.6. 2sc5254.pdf Size:177K _toshiba

2SC5254
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5254
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure: NF = 1.5dB (f = 2 GHz)
• High gain: Gain = 8.5dB (f = 2 GHz)
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 15 V
Collector-emitter voltage VCEO 7 V
Emitter-base voltage VEBO 1

4.7. 2sc5258.pdf Size:103K _toshiba



4.8. 2sc5251.pdf Size:35K _hitachi

2SC5251
Silicon NPN Triple Diffused Planar
Preliminary
Application
Character display horizontal deflection output
Features
• High breakdown voltage
VCBO = 1500 V
• High speed switching
tf = 0.2 µsec (typ)
• Isolated package
TO-3P•FM (N)
Outline
TO-3PFM (N)
1. Base
2. Collector
3. Emitter
1
2
3
2SC5251
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Un

4.9. 2sc5250.pdf Size:71K _hitachi

Printed from www.freetradezone.com, a service of Partminer, Inc.
This Material Copyrighted By Its Respective Manufacturer
Printed from www.freetradezone.com, a service of Partminer, Inc.
This Material Copyrighted By Its Respective Manufacturer
Printed from www.freetradezone.com, a service of Partminer, Inc.
This Material Copyrighted By Its Respective Manufacturer
Printed from www.fr

4.10. 2sc5259.pdf Size:1007K _kexin

SMD Type Transistors
NPN Transistors
2SC5259
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=15mA
1 2
● Collector Emitter Voltage VCEO=7V
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 15
Collecto

4.11. 2sc5254.pdf Size:1019K _kexin

SMD Type Transistors
NPN Transistors
2SC5254
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=40mA
● Collector Emitter Voltage VCEO=7V
1 2
+0.05
0.95+0.1
-0.1 0.1 -0.01
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 15
Collecto

2SC2628 Datasheet (PDF)

1.1. 2sc2628.pdf Size:138K _mitsubishi

4.1. 2sc2626.pdf Size:101K _fuji

Fuji Semiconductor, Inc. — P.O. Box 702708 — Dallas, TX 75370 — 972-733-1700 — www.fujisemiconductor.com

4.2. 2sc2620.pdf Size:24K _hitachi

2SC2620
Silicon NPN Epitaxial Planar
Application
VHF amplifier, Local oscillator
Outline
MPAK
3
1
1. Emitter
2. Base
2
3. Collector
2SC2620
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 30 V
Collector to emitter voltage VCEO 20 V
Emitter to base voltage VEBO 4V
Collector current IC 20 mA
Collector power dissipation PC 100 mW
J

 4.3. 2sc2627.pdf Size:135K _mitsubishi

4.4. 2sc2629.pdf Size:135K _mitsubishi

 4.5. 2sc2625.pdf Size:129K _mospec

A
A
A

4.6. 2sc2625b.pdf Size:238K _nell

RoHS
2SC2625B RoHS
SEMICONDUCTOR
Nell High Power Products
Silicon NPN triple diffusion planar transistor
(High voltage switching transistor)
10A/400V/80W
15.6±0.4
4.8±0.2
9.6
2.0±0.1
Φ3.2±0,1
TO-3P(B)
2
3
FEATURES
+0.2
+0.2
0.65
1.05
-0.1
-0.1
High-speed switching
High collector to base voltage VCBO
5.45±0.1 5.45±0.1
1.4
Satisfactory linearity of foward cur

4.7. 2sc2620.pdf Size:337K _kexin

SMD Type Transistors
NPN Transistors
2SC2620
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=20mA
1 2
● Collector Emitter Voltage VCEO=20V
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 30
Collect

4.8. 2sc2621 3da2621.pdf Size:231K _foshan

2SC2621(3DA2621) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于彩电色度信号输出。
Purpose: Color TV chroma output applications.
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V 300 V
CBO
V 300 V
CEO
V 6.5 V
EBO
I 200 mA
C
I 700 mA
CP
P (Ta=25℃) 1.2 W
C
P (Tc=25℃) 10 W
C
T 150 ℃

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