Даташит 2sc2625 pdf ( datasheet )
Содержание:
- Биполярный транзистор 2SC2630 — описание производителя. Основные параметры. Даташиты.
- 2SC2630 Datasheet (PDF)
- 2SC2621 Datasheet (PDF)
- 2SC2625 Datasheet (PDF)
- 2SC3320 Datasheet (PDF)
- 2SC5589 Datasheet (PDF)
- 2SC2624 Datasheet (PDF)
- 2SC2625B Datasheet (PDF)
- 2SC2625 Datasheet Download — UTC
- 2SC2626 Datasheet (PDF)
- 2SC2655 Datasheet (PDF)
- 2SC5252 Datasheet (PDF)
- 2SC2628 Datasheet (PDF)
Биполярный транзистор 2SC2630 — описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC2630
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 100
W
Макcимально допустимое напряжение коллектор-база (Ucb): 35
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 17
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4
V
Макcимальный постоянный ток коллектора (Ic): 14
A
Предельная температура PN-перехода (Tj): 175
°C
Граничная частота коэффициента передачи тока (ft): 175
MHz
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: XM5
2SC2630
Datasheet (PDF)
1.1. 2sc2630.pdf Size:135K _mitsubishi
4.1. 2sc2639.pdf Size:127K _toshiba
4.2. 2sc2638.pdf Size:128K _toshiba
4.3. 2sc2632.pdf Size:34K _panasonic
Transistor
2SC2632
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
Unit: mm
Complementary to 2SA1124
5.9± 0.2 4.9± 0.2
Features
Satisfactory linearity of forward current transfer ratio hFE.
High collector to emitter voltage VCEO.
Small collector output capacitance Cob.
0.7± 0.1
2.54± 0.15
Absolute Maximum Ratings (Ta=25˚C)
Parameter Sy
4.4. 2sc2632 e.pdf Size:38K _panasonic
Transistor
2SC2632
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
Unit: mm
Complementary to 2SA1124
5.9± 0.2 4.9± 0.2
Features
Satisfactory linearity of forward current transfer ratio hFE.
High collector to emitter voltage VCEO.
Small collector output capacitance Cob.
0.7± 0.1
2.54± 0.15
Absolute Maximum Ratings (Ta=25˚C)
Parameter Sy
4.5. 2sc2634 e.pdf Size:42K _panasonic
Transistor
2SC2634
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
Complementary to 2SA1127
5.0± 0.2 4.0± 0.2
Features
Low noise voltage NV.
High foward current transfer ratio hFE.
Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit
+0.2 +0.2
Collector to base voltage VCBO 60 V 0.45 –0.1 0.45 –0.1
1.27 1.27
Collector to
4.6. 2sc2636 e.pdf Size:59K _panasonic
Transistor
2SC2636
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation
Unit: mm
6.9± 0.1 2.5± 0.1
1.5
1.5 R0.9 1.0
Features
R0.9
High transition frequency fT.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
0.85
Absolute Maximum Ratings (Ta=25˚C)
0.55± 0.1 0.45± 0.05
Paramete
4.7. 2sc2631 e.pdf Size:38K _panasonic
Transistor
2SC2631
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
Unit: mm
Complementary to 2SA1123
5.0± 0.2 4.0± 0.2
Features
Satisfactory linearity of forward current transfer ratio hFE.
High collector to emitter voltage VCEO.
Small collector output capacitance Cob.
Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit
+0.2
4.8. 2sc2631.pdf Size:34K _panasonic
Transistor
2SC2631
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
Unit: mm
Complementary to 2SA1123
5.0± 0.2 4.0± 0.2
Features
Satisfactory linearity of forward current transfer ratio hFE.
High collector to emitter voltage VCEO.
Small collector output capacitance Cob.
Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit
+0.2
4.9. 2sc2634.pdf Size:38K _panasonic
Transistor
2SC2634
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
Complementary to 2SA1127
5.0± 0.2 4.0± 0.2
Features
Low noise voltage NV.
High foward current transfer ratio hFE.
Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit
+0.2 +0.2
Collector to base voltage VCBO 60 V 0.45 –0.1 0.45 –0.1
1.27 1.27
Collector to
4.10. 2sc2636.pdf Size:126K _panasonic
Другие транзисторы… 2SC2623
, 2SC2624
, 2SC2625
, 2SC2626
, 2SC2627
, 2SC2628
, 2SC2629
, 2SC263
, B772
, 2SC2631
, 2SC2632
, 2SC2633
, 2SC2634
, 2SC2635
, 2SC2636
, 2SC2637
, 2SC2638
.
2SC2621 Datasheet (PDF)
1.1. 2sc2621 3da2621.pdf Size:231K _foshan
2SC2621(3DA2621) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于彩电色度信号输出。
Purpose: Color TV chroma output applications.
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V 300 V
CBO
V 300 V
CEO
V 6.5 V
EBO
I 200 mA
C
I 700 mA
CP
P (Ta=25℃) 1.2 W
C
P (Tc=25℃) 10 W
C
T 150 ℃
4.1. 2sc2626.pdf Size:101K _fuji
Fuji Semiconductor, Inc. — P.O. Box 702708 — Dallas, TX 75370 — 972-733-1700 — www.fujisemiconductor.com
4.2. 2sc2620.pdf Size:24K _hitachi
2SC2620
Silicon NPN Epitaxial Planar
Application
VHF amplifier, Local oscillator
Outline
MPAK
3
1
1. Emitter
2. Base
2
3. Collector
2SC2620
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 30 V
Collector to emitter voltage VCEO 20 V
Emitter to base voltage VEBO 4V
Collector current IC 20 mA
Collector power dissipation PC 100 mW
J
4.3. 2sc2628.pdf Size:138K _mitsubishi
4.4. 2sc2627.pdf Size:135K _mitsubishi
4.5. 2sc2629.pdf Size:135K _mitsubishi
4.6. 2sc2625.pdf Size:129K _mospec
A
A
A
4.7. 2sc2625b.pdf Size:238K _nell
RoHS
2SC2625B RoHS
SEMICONDUCTOR
Nell High Power Products
Silicon NPN triple diffusion planar transistor
(High voltage switching transistor)
10A/400V/80W
15.6±0.4
4.8±0.2
9.6
2.0±0.1
Φ3.2±0,1
TO-3P(B)
2
3
FEATURES
+0.2
+0.2
0.65
1.05
-0.1
-0.1
High-speed switching
High collector to base voltage VCBO
5.45±0.1 5.45±0.1
1.4
Satisfactory linearity of foward cur
4.8. 2sc2620.pdf Size:337K _kexin
SMD Type Transistors
NPN Transistors
2SC2620
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=20mA
1 2
● Collector Emitter Voltage VCEO=20V
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 30
Collect
2SC2625 Datasheet (PDF)
1.1. 2sc2625.pdf Size:129K _mospec
A
A
A
1.2. 2sc2625b.pdf Size:238K _nell
RoHS
2SC2625B RoHS
SEMICONDUCTOR
Nell High Power Products
Silicon NPN triple diffusion planar transistor
(High voltage switching transistor)
10A/400V/80W
15.6±0.4
4.8±0.2
9.6
2.0±0.1
Φ3.2±0,1
TO-3P(B)
2
3
FEATURES
+0.2
+0.2
0.65
1.05
-0.1
-0.1
High-speed switching
High collector to base voltage VCBO
5.45±0.1 5.45±0.1
1.4
Satisfactory linearity of foward cur
4.1. 2sc2626.pdf Size:101K _fuji
Fuji Semiconductor, Inc. — P.O. Box 702708 — Dallas, TX 75370 — 972-733-1700 — www.fujisemiconductor.com
4.2. 2sc2620.pdf Size:24K _hitachi
2SC2620
Silicon NPN Epitaxial Planar
Application
VHF amplifier, Local oscillator
Outline
MPAK
3
1
1. Emitter
2. Base
2
3. Collector
2SC2620
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 30 V
Collector to emitter voltage VCEO 20 V
Emitter to base voltage VEBO 4V
Collector current IC 20 mA
Collector power dissipation PC 100 mW
J
4.3. 2sc2628.pdf Size:138K _mitsubishi
4.4. 2sc2627.pdf Size:135K _mitsubishi
4.5. 2sc2629.pdf Size:135K _mitsubishi
4.6. 2sc2620.pdf Size:337K _kexin
SMD Type Transistors
NPN Transistors
2SC2620
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=20mA
1 2
● Collector Emitter Voltage VCEO=20V
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 30
Collect
4.7. 2sc2621 3da2621.pdf Size:231K _foshan
2SC2621(3DA2621) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于彩电色度信号输出。
Purpose: Color TV chroma output applications.
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V 300 V
CBO
V 300 V
CEO
V 6.5 V
EBO
I 200 mA
C
I 700 mA
CP
P (Ta=25℃) 1.2 W
C
P (Tc=25℃) 10 W
C
T 150 ℃
2SC3320 Datasheet (PDF)
1.1. 2sc3320.pdf Size:191K _utc
UNISONIC TECHNOLOGIES CO.,LTD
2SC3320 NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE HIGH SPEED
SWITCHING
FEATURES
* High voltage, high speed switching
* High reliability
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
2SC3320L-x-T3P-T 2SC3320L-x-T3P-T TO-3P B C E Tube
2SC3320L-x-T3N-T 2SC3320L-x-T3N-T TO-3PN B C E T
1.2. 2sc3320.pdf Size:109K _fuji
Fuji Semiconductor, Inc. — P.O. Box 702708 — Dallas, TX 75370 — 972-733-1700 — www.fujisemiconductor.com
1.3. 2sc3320b.pdf Size:230K _nell
RoHS
RoHS
2SC3320B
SEMICONDUCTOR
Nell High Power Products
Silicon NPN triple diffusion planar transistor
(High voltage switching transistor)
15A/400V/150W
15.6±0.4
4.8±0.2
9.6
2.0±0.1
Φ3.2±0,1
TO-3P(B)
2
3
+0.2
+0.2
0.65
1.05
-0.1
-0.1
FEATURES
5.45±0.1 5.45±0.1
1.4
High-speed switching
B C E
High collector to base voltage, VCBO
Satisfactory linearity of fow
2SC5589 Datasheet (PDF)
1.1. 2sc5589.pdf Size:298K _toshiba
2SC5589
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5589
HORIZONTAL DEFLECTION OUTPUT FOR
HIGH RESOLUTION DISPLAY, COLOR TV
Unit: mm
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t (2) = 0.1 µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Co
4.1. 2sc5588.pdf Size:331K _toshiba
2SC5588
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5588
Unit: mm
HORIZONTAL DEFLECTION OUTPUT FOR SUPER
HIGH RESOLUTION DISPLAY
COLOR TV FOR DIGITAL TV & HDTV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1700 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t (2) = 0.1µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTER
4.2. 2sc5587.pdf Size:332K _toshiba
2SC5587
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5587
HORIZONTAL DEFLECTION OUTPUT FOR HIGH
Unit: mm
RESOLUTION
DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO = 1500 V
Low Saturation Voltage : V = 3 V (Max.)
CE (sat)
High Speed : t (2) = 0.1 µs (Typ.)
f
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
4.3. 2sc5585 2sc5663.pdf Size:68K _rohm
2SC5585 / 2SC5663
Transistors
Low frequency transistor (12V, 0.5A)
2SC5585 / 2SC5663
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
External dimensions (Unit : mm)
Applications
For switching
2SC5585
For muting
(1)
(2)
(3)
0.8
Features
1.6
1) High current.
2) Low VCE(sat).
0.1Min.
(1) Emitter
4.4. 2sc5584.pdf Size:45K _panasonic
Power Transistors
2SC5584
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
20.0±0.5 5.0±0.3
(3.0)
φ 3.3±0.2
Features
• High breakdown voltage, and high reliability through the use of a
glass passivation layer
(1.5)
• High-speed switching
• Wide area of safe operation (ASO) (1.5)
2.0±0.3
2.7±0.3
3.0±0.3
1.0±0.2
Absolute Maximum Ra
4.5. 2sc5580.pdf Size:43K _panasonic
Transistors
2SC5580
Silicon NPN epitaxial planer type
Unit: mm
For high-frequency oscillation / switching
0.3+0.1 0.15+0.10
–0.05
–0.0
3
Features
• High transition frequency fT
• S-mini type package, allowing downsizing of the equipment and
1 2
automatic insertion through the tape packing and the magazine
(0.65) (0.65)
packing.
1.3±0.1
2.0±0.2
10°
Absolute Maximu
4.6. 2sc5383 2sc5583.pdf Size:46K _panasonic
Power Transistors
2SC5583
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
20.0±0.5 5.0±0.3
(3.0)
φ 3.3±0.2
Features
• High breakdown voltage, and high reliability through the use of a
glass passivation layer
(1.5)
• High-speed switching
• Wide area of safe operation (ASO) (1.5)
2.0±0.3
2.7±0.3
3.0±0.3
1.0±0.2
Absolute Maximum Ra
4.7. 2sc5585.pdf Size:198K _secos
2SC5585
0.5A , 15V
NPN Silicon General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
SOT-523
FEATURES
High Current.
Low VCE(sat). VCE(sat)≦0.25V (@IC=200mA / IB=10mA)
A
Complement of 2SC4738. M
3
3
Top View C B
Application
1
1 2
General Purpose Amplification.
L 2
K
E
MARKING
D
H
4.8. 2sc5586 2sc5830 2sc5924.pdf Size:1332K _sanken-ele
Print to PDF without this message by purchasing novaPDF (http://www.novapdf.com/)
Print to PDF without this message by purchasing novaPDF (http://www.novapdf.com/)
4.9. 2sc5585.pdf Size:204K _lge
2SC5585
SOT-523 Transistor(NPN)
1. BASE
SOT-523
2. EMITTER
3. COLLECTOR
Features
High current.
Low VCE(sat). VCE(sat)≤250mV at IC = 200mA / IB = 10mA
MARKING: BX
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector- Base Voltage 15 V
VCEO Collector-Emitter Voltage 12 V
VEBO Emitter-B
4.10. 2sc5585.pdf Size:192K _wietron
2SC5585
NPN TRANSISTOR
3
P b Lead(Pb)-Free
1
2
FEATURES:
SOT-523(SC-75)
* High current.
* Low VCE(sat). VCE(sat).250mV at IC = 200mA / IB = 10mA
MAXIMUM RATINGS (TA=25°Cunless otherwise noted)
Parameter Symbol Value Units
Collector-Base Voltage VCBO 15 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 6 V
Collector Current –Continuous IC 500 mA
Collector Dissipa
2SC2624 Datasheet (PDF)
4.1. 2sc2626.pdf Size:101K _fuji
Fuji Semiconductor, Inc. — P.O. Box 702708 — Dallas, TX 75370 — 972-733-1700 — www.fujisemiconductor.com
4.2. 2sc2620.pdf Size:24K _hitachi
2SC2620
Silicon NPN Epitaxial Planar
Application
VHF amplifier, Local oscillator
Outline
MPAK
3
1
1. Emitter
2. Base
2
3. Collector
2SC2620
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 30 V
Collector to emitter voltage VCEO 20 V
Emitter to base voltage VEBO 4V
Collector current IC 20 mA
Collector power dissipation PC 100 mW
J
4.3. 2sc2628.pdf Size:138K _mitsubishi
4.4. 2sc2627.pdf Size:135K _mitsubishi
4.5. 2sc2629.pdf Size:135K _mitsubishi
4.6. 2sc2625.pdf Size:129K _mospec
A
A
A
4.7. 2sc2625b.pdf Size:238K _nell
RoHS
2SC2625B RoHS
SEMICONDUCTOR
Nell High Power Products
Silicon NPN triple diffusion planar transistor
(High voltage switching transistor)
10A/400V/80W
15.6±0.4
4.8±0.2
9.6
2.0±0.1
Φ3.2±0,1
TO-3P(B)
2
3
FEATURES
+0.2
+0.2
0.65
1.05
-0.1
-0.1
High-speed switching
High collector to base voltage VCBO
5.45±0.1 5.45±0.1
1.4
Satisfactory linearity of foward cur
4.8. 2sc2620.pdf Size:337K _kexin
SMD Type Transistors
NPN Transistors
2SC2620
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=20mA
1 2
● Collector Emitter Voltage VCEO=20V
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 30
Collect
4.9. 2sc2621 3da2621.pdf Size:231K _foshan
2SC2621(3DA2621) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于彩电色度信号输出。
Purpose: Color TV chroma output applications.
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V 300 V
CBO
V 300 V
CEO
V 6.5 V
EBO
I 200 mA
C
I 700 mA
CP
P (Ta=25℃) 1.2 W
C
P (Tc=25℃) 10 W
C
T 150 ℃
2SC2625B Datasheet (PDF)
1.1. 2sc2625b.pdf Size:238K _nell
RoHS
2SC2625B RoHS
SEMICONDUCTOR
Nell High Power Products
Silicon NPN triple diffusion planar transistor
(High voltage switching transistor)
10A/400V/80W
15.6±0.4
4.8±0.2
9.6
2.0±0.1
Φ3.2±0,1
TO-3P(B)
2
3
FEATURES
+0.2
+0.2
0.65
1.05
-0.1
-0.1
High-speed switching
High collector to base voltage VCBO
5.45±0.1 5.45±0.1
1.4
Satisfactory linearity of foward cur
3.1. 2sc2625.pdf Size:129K _mospec
A
A
A
4.1. 2sc2626.pdf Size:101K _fuji
Fuji Semiconductor, Inc. — P.O. Box 702708 — Dallas, TX 75370 — 972-733-1700 — www.fujisemiconductor.com
4.2. 2sc2620.pdf Size:24K _hitachi
2SC2620
Silicon NPN Epitaxial Planar
Application
VHF amplifier, Local oscillator
Outline
MPAK
3
1
1. Emitter
2. Base
2
3. Collector
2SC2620
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 30 V
Collector to emitter voltage VCEO 20 V
Emitter to base voltage VEBO 4V
Collector current IC 20 mA
Collector power dissipation PC 100 mW
J
4.3. 2sc2628.pdf Size:138K _mitsubishi
4.4. 2sc2627.pdf Size:135K _mitsubishi
4.5. 2sc2629.pdf Size:135K _mitsubishi
4.6. 2sc2620.pdf Size:337K _kexin
SMD Type Transistors
NPN Transistors
2SC2620
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=20mA
1 2
● Collector Emitter Voltage VCEO=20V
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 30
Collect
4.7. 2sc2621 3da2621.pdf Size:231K _foshan
2SC2621(3DA2621) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于彩电色度信号输出。
Purpose: Color TV chroma output applications.
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V 300 V
CBO
V 300 V
CEO
V 6.5 V
EBO
I 200 mA
C
I 700 mA
CP
P (Ta=25℃) 1.2 W
C
P (Tc=25℃) 10 W
C
T 150 ℃
2SC2625 Datasheet Download — UTC
| Номер произв | 2SC2625 | |||
| Описание | HIGH VOLTAGE HIGH SPEED SWITCHING | |||
| Производители | UTC | |||
| логотип | ||||
1Page
UNISONIC TECHNOLOGIES CO.,LTD
2SC2625 ABSOLUTE MAXIMUM RATINGS (TC=25 ) PARAMETER VCBO VCEO VCEO(SUS) VEBO IC IB PD TJ TSTG RATINGS ELECTRICAL SPECIFICATIONS (TC =25 , Unless Otherwise Specified) PARAMETER VCBO VCEO VCEO (SUS) VEBO VCE (Sat) VBE (Sat) ICBO IEBO hFE tON tSTG tF TEST CONDITIONS ICBO=1mA ICEO=10mA IC=1A IEBO=0.1mA IC=4A, IB=0.8A VCBO=450V VEBO=7V IC=4A, VCE=5V IC=7.5A, IB1=-IB2=1.5A RL=20Ω, Pw=20µs, Duty ≤ 2% MIN RL=20 IB1 IC IB 2 IB 1 IB2 PW=20 s 0.9IC 0.1IC IC ton tstg tf UNISONIC TECHNOLOGIES CO., LTD
2SC2625
TYPICAL CHARACTERISTICS Collector Output Characteristics TC=25 300mA IB =100mA 2 4 6 8 10 12 CollectorEmitter Voltage, VCE (V) 14 VBE(sat) TC=25 IC=5IB VCE(sat ) 0.01 CollectorCurrent, IC (A) Switching Time 3 TC=25 tSTG IC=5IB1 =5IB2 1 0.5 tON 0.3 tF NPN EPITAXIAL SILICON TRANSISTOR 50 TC=120 30 25 -20 10 -40 5 VCE=5V 1 Collector Current, IC (A) Safe Operating Area TC=25 10 Single Pulse 5 PW=1ms 0.1 CollectorEmitter Voltage, VCE (V) 0.1 CollectorCurrent, IC (A) 10 |
||||
| Всего страниц | 3 Pages | |||
| Скачать PDF |
2SC2626 Datasheet (PDF)
1.1. 2sc2626.pdf Size:101K _fuji
Fuji Semiconductor, Inc. — P.O. Box 702708 — Dallas, TX 75370 — 972-733-1700 — www.fujisemiconductor.com
4.1. 2sc2620.pdf Size:24K _hitachi
2SC2620
Silicon NPN Epitaxial Planar
Application
VHF amplifier, Local oscillator
Outline
MPAK
3
1
1. Emitter
2. Base
2
3. Collector
2SC2620
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 30 V
Collector to emitter voltage VCEO 20 V
Emitter to base voltage VEBO 4V
Collector current IC 20 mA
Collector power dissipation PC 100 mW
J
4.2. 2sc2628.pdf Size:138K _mitsubishi
4.3. 2sc2627.pdf Size:135K _mitsubishi
4.4. 2sc2629.pdf Size:135K _mitsubishi
4.5. 2sc2625.pdf Size:129K _mospec
A
A
A
4.6. 2sc2625b.pdf Size:238K _nell
RoHS
2SC2625B RoHS
SEMICONDUCTOR
Nell High Power Products
Silicon NPN triple diffusion planar transistor
(High voltage switching transistor)
10A/400V/80W
15.6±0.4
4.8±0.2
9.6
2.0±0.1
Φ3.2±0,1
TO-3P(B)
2
3
FEATURES
+0.2
+0.2
0.65
1.05
-0.1
-0.1
High-speed switching
High collector to base voltage VCBO
5.45±0.1 5.45±0.1
1.4
Satisfactory linearity of foward cur
4.7. 2sc2620.pdf Size:337K _kexin
SMD Type Transistors
NPN Transistors
2SC2620
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=20mA
1 2
● Collector Emitter Voltage VCEO=20V
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 30
Collect
4.8. 2sc2621 3da2621.pdf Size:231K _foshan
2SC2621(3DA2621) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于彩电色度信号输出。
Purpose: Color TV chroma output applications.
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V 300 V
CBO
V 300 V
CEO
V 6.5 V
EBO
I 200 mA
C
I 700 mA
CP
P (Ta=25℃) 1.2 W
C
P (Tc=25℃) 10 W
C
T 150 ℃
2SC2655 Datasheet (PDF)
1.1. 2sc2655.pdf Size:148K _toshiba
2SC2655
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2655
Industrial Applications
Power Amplifier Applications
Unit: mm
Power Switching Applications
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
• High collector power dissipation: PC = 900 mW
• High-speed switching: tstg = 1.0 μs (typ.)
• Complementary to 2SA1020.
Absolute Maximum
1.2. 2sc2655l-y.pdf Size:385K _mcc
MCC
Micro Commercial Components
TM 2SC2655L-O
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
2SC2655L-Y
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Halogen free available upon request by adding suffix «-HF»
• Collector of 0.9Watts of Power Dissipation. NPN
• Collector-current 2.0A
Plastic-Encapsulate
• Operating and storage junction temper
1.3. 2sc2655l-o.pdf Size:385K _mcc
MCC
Micro Commercial Components
TM 2SC2655L-O
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
2SC2655L-Y
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Halogen free available upon request by adding suffix «-HF»
• Collector of 0.9Watts of Power Dissipation. NPN
• Collector-current 2.0A
Plastic-Encapsulate
• Operating and storage junction temper
1.4. 2sc2655-o.pdf Size:405K _mcc
MCC
Micro Commercial Components
TM 2SC2655-O
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
2SC2655-Y
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Halogen free available upon request by adding suffix «-HF»
• Collector of 0.9Watts of Power Dissipation. NPN
• Collector-current 2.0A
Plastic-Encapsulate
• Operating and storage junction temperat
1.5. 2sc2655-y.pdf Size:405K _mcc
MCC
Micro Commercial Components
TM 2SC2655-O
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
2SC2655-Y
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• Halogen free available upon request by adding suffix «-HF»
• Collector of 0.9Watts of Power Dissipation. NPN
• Collector-current 2.0A
Plastic-Encapsulate
• Operating and storage junction temperat
1.6. 2sc2655.pdf Size:254K _utc
UNISONIC TECHNOLOGIES CO., LTD
2SC2655 NPN SILICON TRANSISTOR
POWER AMPLIFIER
APPLICATIONS POWER
SWITCHING APPLICATIONS
FEATURES
* Low saturation voltage: VCE(SAT)= 0.5V (Max.)
* High speed switching time: TSTG=1.0μs (Typ.)
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
2SC2655L-x-AE3-R 2SC2655G-x-AE3-R SOT-23 E B C
1.7. 2sc2655.pdf Size:212K _secos
2SC2655
2A , 50V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92MOD
FEATURES
Low saturation voltage：VCE(sat)=0.5V(Max)(IC=1A)
A
D
High speed switching time：tstg=1μs(Typ.)
B
Complementary to 2SA1020
K
E
F
CLASSIFICATION OF hFE (1)
C
Product-Rank 2SC2655-O
1.8. 2sc2655 to-92l.pdf Size:251K _lge
2SC2655
TO-92L Transistor (NPN)
TO-92L
1.EMITTER
2.COLLECTOR
3.BASE
4.700
2 3
5.100
1
Features
Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A)
7.800
High speed switching time: tstg=1μs(Typ.) 8.200
Complementary to 2SA1020
0.600
0.800
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
0.350
Symbol Parameter Symbol Units
0.550
13.800
VCBO Collector-Base Vo
1.9. 2sc2655 to-92mod.pdf Size:276K _lge
2SC2655
TO-92MOD Transistor (NPN)
1.EMITTER
TO-92MOD
1
2
2.COLLECTOR
3
3.BASE
Features
5.800
Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A)
6.200
High speed switching time: tstg=1μs(Typ.)
Complementary to 2SA1020
8.400
8.800
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
0.900
1.100
Symbol Parameter Symbol Units
0.400
0.600
VCBO Collector-Base Voltag
1.10. 2sc2655.pdf Size:277K _wietron
2SC2655
NPN General Purpose Transistors
P b Lead(Pb)-Free
1
2
3
1.EMITTER
3.BASE
2.COLLECTOR
TO-92MOD
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO V
Ic=100μA,IE=0 50
Collector-emitter breakdown voltage V(BR)CEO V
Ic=10mA,IB=0 50
Emitter-base breakdown voltag
2SC5252 Datasheet (PDF)
1.1. 2sc5252.pdf Size:38K _hitachi
2SC5252
Silicon NPN Triple Diffused Planar
ADE-208-391A (Z)
2nd. Edition
Application
Character display horizontal deflection output
Features
• High breakdown voltage
VCBO = 1500 V
• High speed switching
tf ≤ 0.15 µsec(typ.)
• Isolated package
TO–3P•FM
Outline
TO-3PFM
1. Base
2. Collector
3. Emitter
1
2
3
2SC5252
Absolute Maximum Ratings (Ta = 25°C)
Item Sym
4.1. 2sc5255.pdf Size:180K _toshiba
2SC5255
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5255
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure: NF = 1.5dB (f = 2 GHz)
• High gain: Gain = 8.5dB (f = 2 GHz)
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 15 V
Collector-emitter voltage VCEO 7 V
Emitter-base voltage VEBO 1
4.2. 2sc5256ft.pdf Size:104K _toshiba
4.3. 2sc5257.pdf Size:126K _toshiba
4.4. 2sc5256.pdf Size:164K _toshiba
4.5. 2sc5259.pdf Size:182K _toshiba
4.6. 2sc5254.pdf Size:177K _toshiba
2SC5254
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5254
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure: NF = 1.5dB (f = 2 GHz)
• High gain: Gain = 8.5dB (f = 2 GHz)
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 15 V
Collector-emitter voltage VCEO 7 V
Emitter-base voltage VEBO 1
4.7. 2sc5258.pdf Size:103K _toshiba
4.8. 2sc5251.pdf Size:35K _hitachi
2SC5251
Silicon NPN Triple Diffused Planar
Preliminary
Application
Character display horizontal deflection output
Features
• High breakdown voltage
VCBO = 1500 V
• High speed switching
tf = 0.2 µsec (typ)
• Isolated package
TO-3P•FM (N)
Outline
TO-3PFM (N)
1. Base
2. Collector
3. Emitter
1
2
3
2SC5251
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Un
4.9. 2sc5250.pdf Size:71K _hitachi
Printed from www.freetradezone.com, a service of Partminer, Inc.
This Material Copyrighted By Its Respective Manufacturer
Printed from www.freetradezone.com, a service of Partminer, Inc.
This Material Copyrighted By Its Respective Manufacturer
Printed from www.freetradezone.com, a service of Partminer, Inc.
This Material Copyrighted By Its Respective Manufacturer
Printed from www.fr
4.10. 2sc5259.pdf Size:1007K _kexin
SMD Type Transistors
NPN Transistors
2SC5259
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=15mA
1 2
● Collector Emitter Voltage VCEO=7V
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 15
Collecto
4.11. 2sc5254.pdf Size:1019K _kexin
SMD Type Transistors
NPN Transistors
2SC5254
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=40mA
● Collector Emitter Voltage VCEO=7V
1 2
+0.05
0.95+0.1
-0.1 0.1 -0.01
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 15
Collecto
2SC2628 Datasheet (PDF)
1.1. 2sc2628.pdf Size:138K _mitsubishi
4.1. 2sc2626.pdf Size:101K _fuji
Fuji Semiconductor, Inc. — P.O. Box 702708 — Dallas, TX 75370 — 972-733-1700 — www.fujisemiconductor.com
4.2. 2sc2620.pdf Size:24K _hitachi
2SC2620
Silicon NPN Epitaxial Planar
Application
VHF amplifier, Local oscillator
Outline
MPAK
3
1
1. Emitter
2. Base
2
3. Collector
2SC2620
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 30 V
Collector to emitter voltage VCEO 20 V
Emitter to base voltage VEBO 4V
Collector current IC 20 mA
Collector power dissipation PC 100 mW
J
4.3. 2sc2627.pdf Size:135K _mitsubishi
4.4. 2sc2629.pdf Size:135K _mitsubishi
4.5. 2sc2625.pdf Size:129K _mospec
A
A
A
4.6. 2sc2625b.pdf Size:238K _nell
RoHS
2SC2625B RoHS
SEMICONDUCTOR
Nell High Power Products
Silicon NPN triple diffusion planar transistor
(High voltage switching transistor)
10A/400V/80W
15.6±0.4
4.8±0.2
9.6
2.0±0.1
Φ3.2±0,1
TO-3P(B)
2
3
FEATURES
+0.2
+0.2
0.65
1.05
-0.1
-0.1
High-speed switching
High collector to base voltage VCBO
5.45±0.1 5.45±0.1
1.4
Satisfactory linearity of foward cur
4.7. 2sc2620.pdf Size:337K _kexin
SMD Type Transistors
NPN Transistors
2SC2620
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
3
■ Features
● Collector Current Capability IC=20mA
1 2
● Collector Emitter Voltage VCEO=20V
+0.1
+0.05
0.95-0.1 0.1-0.01
+0.1
1.9-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector — Base Voltage VCBO 30
Collect
4.8. 2sc2621 3da2621.pdf Size:231K _foshan
2SC2621(3DA2621) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于彩电色度信号输出。
Purpose: Color TV chroma output applications.
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号 数值 单位
Symbol Rating Unit
V 300 V
CBO
V 300 V
CEO
V 6.5 V
EBO
I 200 mA
C
I 700 mA
CP
P (Ta=25℃) 1.2 W
C
P (Tc=25℃) 10 W
C
T 150 ℃
