Характеристики транзистора s8050

Содержание:

M8050 Datasheet (PDF)
Биполярный транзистор L8050 — описание производителя. Основные параметры. Даташиты.
L8050 Datasheet (PDF)
C8050D Datasheet (PDF)
HE8050 Datasheet (PDF)
KTC8050 Datasheet (PDF)
HE8050S Datasheet (PDF)
MPS8050SC Datasheet (PDF)
H8050 Datasheet (PDF)
L8050 Datasheet (PDF)
KTC8050S Datasheet (PDF)
Другие разделы справочника:

M8050 Datasheet (PDF)

1.1. m8050-d.pdf Size:271K _mcc

MCC
Micro Commercial Components
TM
M8050-C
20736 Marilla Street Chatsworth
Micro Commercial Components
CA 91311
M8050-D
Phone: (818) 701-4933
Fax: (818) 701-4939
Features
• TO-92 Plastic-Encapsulate Transistors
NPN Silicon
• Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.
• Collector-current 0.8A
Plastic-Encapsulate
• Collector-base Voltage 40V
• Operating an

1.2. m8050-c.pdf Size:271K _mcc

1.3. m8050.pdf Size:365K _secos

M8050
40V, 0.8A, 200mW
NPN Plastic Encapsulate Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
A
 Power dissipation
L
3
3
Top View C B
MARKING
1
1 2
Product Marking Code
2
K E
M8050 Y11
D
H J
F G
PACKAGE INFORMATION
Millimeter Millimeter
Package MPQ Leader Size REF. REF.
Min.

1.4. m8050s.pdf Size:512K _jiangsu

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO-92
M8050S TRANSISTOR (NPN)
1.EMITTER
FEATURES
Power Dissipation 2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 6 V
IC Collector Curr

1.5. m8050.pdf Size:479K _htsemi

M8050
TRANSISTOR(NPN)
SOT-23
FEATURES
Power dissipation
1. BASE
2. EMITTER
MARKING: Y11
3. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 0.8 A
PC Collector Power Dissipation 0.2 W
Tj Junction

1.6. m8050.pdf Size:292K _gsme

桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
Guilin Strong Micro-Electronics Co.,Ltd.
Guilin Strong Micro-Electronics Co.,Ltd.
GM8050
FEATURES
■FEATURES 特點
FEATURES
Low Frequency Power Amplifier 低頻功率放大
Suitable for Driver Stage of Small Motor 小馬達驅動
Complementary to GM8550 与 GM8550 互补
(Ta=25 )
■最大

1.7. m8050 sot-23.pdf Size:234K _lge

M8050
SOT-23 Transistor(NPN)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Features

Power dissipation
MARKING: Y11
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 0.8 A
PC

1.8. m8050 to-92.pdf Size:200K _lge

M8050(NPN)
TO-92 Transistors
TO-92
1.
EMITTER
2. BASE
3. COLLECTOR
Features

Power dissipation
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 800 mA
PC Collector Power Dissipation 625 mW
Dimensions i

1.9. m8050lt1.pdf Size:325K _wietron

M8050LT1
NPN General Purpose Transistors
3
P b Lead(Pb)-Free
1
2
SOT-23
Value
V
CEO 25
40
5.0
800
300
2.4
417
0.1
25
100 40
5.0
100
0.15
u
35
u
4.0 0.15
WEITRON
1/4 15-Jul-10
http://www.weitron.com.tw
M8050LT1
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol Max UnitM
Min
ON CHARACTERISTICS
DC Current Gain
—

1.10. gstm8050lt1.pdf Size:210K _globaltech_semi

GSTM8050LT1
NPN General Purpose Transistor
Product Description Features
This device is designed as a general purpose Collector-Emitter Voltage : 25V
amplifier and switch. Collector Current : 800mA
Lead(Pb)-Free
Packages & Pin Assignments
SOT-23
Pin Description
1 Base
2 Emitter
3 Collector
Marking Information
P/N Package Rank Part Marking
GSTM8050LT1F SOT-23 P 80P

Биполярный транзистор L8050 — описание производителя. Основные параметры. Даташиты.

Транзистор s8050 чем заменить

Наименование производителя: L8050

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 1
W

Макcимально допустимое напряжение коллектор-база (Ucb): 30
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V

Макcимальный постоянный ток коллектора (Ic): 1.5
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 100
MHz

Ёмкость коллекторного перехода (Cc): 15
pf

Статический коэффициент передачи тока (hfe): 85

Корпус транзистора: TO92

L8050
Datasheet (PDF)

Транзистор s9018

1.1. l8050.pdf Size:597K _blue-rocket-elect

L8050(BR3DA8050K)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package.
特征 / Features
PC, IC 大,与 L8550(BR3CA8550K)互补。
High PC and IC, complementary pair with L8550(BR3CA8550K).
用途 / Applications
用于 2W 乙类推挽功放。
2W output amplifier of portable radios in cl

1.2. l8050m.pdf Size:407K _blue-rocket-elect

L8050M
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
与 L8550M 互补。
Complementary pair with L8550M.
用途 / Applications
用于功率放大电路。
Power amplifier applications.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
3
2

1.3. l8050hplt1g.pdf Size:101K _lrc

LESHAN RADIO COMPANY, LTD.
L8050HQLTIG
General Purpose Transistors
Series
NPN Silicon S-L8050HQLTIG
FEATURE
Series
High current capacity in compact package.
IC =1.5 A.
3
Epitaxial planar type.
NPN complement: L8050H
Pb-Free Package is available.
1
S- Prefix for Automotive and Other Applications Requiring Unique Site
2
and Control Change Requirements; AEC-Q101 Qualified and

1.4. l8050hslt1g.pdf Size:83K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
L8050HQLTIG
NPN Silicon
Series
S-L8050HQLTIG
FEATURE
High current capacity in compact package.
Series
IC =1.5 A.
Epitaxial planar type.
3
NPN complement: L8050H
Pb-Free Package is available.
S- Prefix for Automotive and Other Applications Requiring Unique Site
1
and Control Change Requirements; AEC-Q101 Qualified and P

1.5. l8050qlt1g.pdf Size:70K _lrc

LESHAN RADIO COMPANY, LTD.
L8050PLT1G
General Purpose Transistors
Series
NPN Silicon
S-L8050PLT1G
FEATURE
Series
High current capacity in compact package.
IC = 0.8A.
Epitaxial planar type. 3
NPN complement: L8050
Pb-Free Package is available.
1
S- Prefix for Automotive and Other Applications Requiring Unique Site
2
and Control Change Requirements; AEC-Q101 Qualified and PPA

1.6. l8050plt1g.pdf Size:77K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
L8050PLT1G
Series
NPN Silicon
S-L8050PLT1G
FEATURE Series
High current capacity in compact package.
IC = 0.8A.
3
Epitaxial planar type.
NPN complement: L8050
Pb-Free Package is available.
1
S- Prefix for Automotive and Other Applications Requiring Unique Site
2
and Control Change Requirements; AEC-Q101 Qualified and PP

1.7. l8050hqlt1g.pdf Size:88K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
L8050HQLTIG
Series
NPN Silicon
S-L8050HQLTIG
FEATURE
Series
High current capacity in compact package.
IC =1.5 A.
3
Epitaxial planar type.
NPN complement: L8050H
Pb-Free Package is available.

1
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and

1.8. l8050hrlt1g.pdf Size:84K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
L8050HQLTIG
Series
NPN Silicon
S-L8050HQLTIG
FEATURE
High current capacity in compact package.
Series
IC =1.5 A.
Epitaxial planar type.
3
NPN complement: L8050H
Pb-Free Package is available.
S- Prefix for Automotive and Other Applications Requiring Unique Site
1
and Control Change Requirements; AEC-Q101 Qualified and P

Другие транзисторы… 2SC4355
, 2SC4356
, 2SC4357
, 2SC4358
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, BD139
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, 2SC4368
, 2SC4369
, 2SC437
.

C8050D Datasheet (PDF)

Даташит 2sc2625 pdf ( datasheet )

0.1. c8050b c8050c c8050d.pdf Size:120K _usha

Transistors
C8050
www.DataSheet4U.com
www.DataSheet4U.com

9.1. tpc8050-h.pdf Size:207K _toshiba

TPC8050-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPC8050-H
Switching Regulator Applications
Motor Drive Applications
Unit: mm
DC-DC Converter Applications
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 9.2 nC (typ.)
• Low drain-source ON-resistance:
RDS (ON) = 9.3 mΩ (typ.)
•

9.2. utc8050s.pdf Size:23K _utc

UTC 8050S NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL NPN
TRANSISTOR
DESCRIPTION
The UTC8050S is a low voltage high current small signal
NPN transistor, designed for Class B push-pull audio
amplifier and general purpose applications.
FEATURES
*Collector current up to 800mA
*Collector-Emitter voltage up to 20 V
TO-92
*Complementary to UTC 8550S
1:EMITTER

9.3. ktc8050a.pdf Size:48K _kec

SEMICONDUCTOR KTC8050A
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION.
B C
FEATURE
·Complementary to KTC8550A.
N DIM MILLIMETERS
A 4.70 MAX
E
K
B 4.80 MAX
MAXIMUM RATING (Ta=25℃) G
C 3.70 MAX
D
D 0.45
CHARACTERISTIC SYMBOL RATING UNIT
E 1.00
F 1.27
VCBO
Collector-Base Voltage 35 V
G 0.85
H 0.45
VCEO
Collector-Emitter Voltage 30 V
_
H
J 14.0

9.4. ktc8050.pdf Size:38K _kec

SEMICONDUCTOR KTC8050
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION.
B C
FEATURE
Complementary to KTC8550.
N DIM MILLIMETERS
A 4.70 MAX
E
K
B 4.80 MAX
MAXIMUM RATING (Ta=25 ) G
C 3.70 MAX
D
D 0.45
CHARACTERISTIC SYMBOL RATING UNIT
E 1.00
F 1.27
VCBO
Collector-Base Voltage 35 V
G 0.85
H 0.45
VCEO
Collector-Emitter Voltage 30 V
_
H
J 14.00 + 0.

9.5. ktc8050s.pdf Size:393K _kec

SEMICONDUCTOR KTC8050S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURE
E
L B L
Complementary to KTC8550S.
DIM MILLIMETERS
_
A 2.93 0.20
+
B 1.30+0.20/-0.15
C 1.30 MAX
2
3 D 0.45+0.15/-0.05
E 2.40+0.30/-0.20
MAXIMUM RATING (Ta=25 )
1
G 1.90
H 0.95
CHARACTERISTIC SYMBOL RATING UNIT
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
VCBO
Collector-Base Voltag

9.6. stc8050n.pdf Size:242K _blue-rocket-elect

STC8050N
Semiconductor
Semiconductor
NPN Silicon Transistor
Descriptions
• High current application
• Radio in class B push-pull operation
Feature
• Complementary pair with STA8550N
Ordering Information
Type NO. Marking Package Code
STC8050N STC8050 TO-92N
Outline Dimensions unit : mm
4.20~4.40
2.25 Max.
0.52 Max.
0.90 Max.
1.27 Typ.
0.40 Max.
1 2 3
3.55

9.7. hc8050s.pdf Size:130K _shantou-huashan

NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HC8050S
█ APPLICATIONS
Audio Frequency Amplifier.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃ TO-92
Tj——Juncttion Temperature…………………………………150℃
PC——Collector Dissipation……………………

9.8. hc8050.pdf Size:137K _shantou-huashan

Shantou Huashan Electronic Devices Co.,Ltd.
HC8050
█ NPN EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLIFIER PORTABLE RADIO IN CLASS
B PUSH-PULL OPERATION.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃ TO-92
Tj——Juncttion Temperature…………………………………150℃
PC——Collector Dissipation

9.9. ftc8050h.pdf Size:352K _first_silicon

SEMICONDUCTOR
FTC8050H
TECHNICAL DATA
General Purpose Transistors
NPN Silicon
FEATURE
3
High current capacity in compact package.
I C
=1.5A.
1
Epitaxial planar type.
2
PNP complement: FTA8550H
Pb-Free Package is available.
SOT–23
COLLECTOR
DEVICE MARKING AND ORDERING INFORMATION
3
Shipping
Device Marking
1
FTC8050H 1FC 3000/Tape&Reel
BASE
2
E

9.10. ftc8050.pdf Size:222K _first_silicon

SEMICONDUCTOR
FTC8050
TECHNICAL DATA
TRANSISTOR (NPN)
FTC8050
B C
FEATURES
Complimentary to FTA8550
Collector current: IC=0.5A
DIM MILLIMETERS
A 4.70 MAX
E
B 4.80 MAX
G
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
C 3.70 MAX
D
D 0.55 MAX
Symbol Parameter
Value Unit E 1.00
F 1.27
G 0.85
VCBO Collector-Base Voltage 40 V
H 0.45
_
H
J 14.00 0.50
+
VCEO Col

9.11. dc8050.pdf Size:62K _dc_components

DC COMPONENTS CO., LTD.
DC8050
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in 2W output amplifier of portable
radios in class B push-pull operation.
TO-92
Pinning
.190(4.83)
1 = Emitter
.170(4.33)
2 = Base
2oTyp
3 = Collector
.190(4.83)
.170(4.33)
2oTyp
Absolute Maximum Ratings(TA=25oC)
.500
Characterist

HE8050 Datasheet (PDF)

1.1. he8050l.pdf Size:19K _utc

UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL NPN TRANSISTOR
DESCRIPTION
The UTC HE8050 is a low voltage high current small
signal NPN transistor, designed for Class B push-pull 2W
audio amplifier for portable radio and general purpose
applications.
1
FEATURES
*Collector current up to 1.5A
*Collector-Emitter voltage up to 25 V
*Complimentary to U

1.2. he8050.pdf Size:216K _utc

UNISONIC TECHNOLOGIES CO., LTD
HE8050 NPN SILICON TRANSISTOR
LOW VOLTAGE HIGH
CURRENT SMALL SIGNAL
NPN TRANSISTOR
 DESCRIPTION
The UTC HE8050 is a low voltage high current small signal NPN
transistor, designed for Class B push-pull 2W audio amplifier for
portable radio and general purpose applications.
 FEATURES
*Collector current up to 1.5A
*Collector-Emitter volta

1.3. he8050s.pdf Size:54K _hsmc

Spec. No. : HE6110
HI-SINCERITY
Issued Date : 1992.09.30
Revised Date : 2004.07.26
MICROELECTRONICS CORP.
Page No. : 1/5
HE8050S
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HE8050S is designed for general purpose amplifier applications.
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ………………………………………………………….

1.4. he8050.pdf Size:46K _hsmc

Spec. No. : HE6112
HI-SINCERITY
Issued Date : 1992.09.30
Revised Date : 2004.11.29
MICROELECTRONICS CORP.
Page No. : 1/4
HE8050
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HE8050 is designed for use in 2W output amplifier of portable radios in class B
push-pull operation.
TO-92
Features
• High total power dissipation (PT: 2W, TC=25°C)
• High collector current (IC: 1.5A)

KTC8050 Datasheet (PDF)

1.1. ktc8050a.pdf Size:48K _kec

1.2. ktc8050.pdf Size:38K _kec

1.3. ktc8050s.pdf Size:393K _kec

HE8050S Datasheet (PDF)

1.1. he8050s.pdf Size:54K _hsmc

4.1. he8050l.pdf Size:19K _utc

4.2. he8050.pdf Size:216K _utc

4.3. he8050.pdf Size:46K _hsmc

MPS8050SC Datasheet (PDF)

1.1. mps8050sc.pdf Size:610K _kec

SEMICONDUCTOR MPS8050SC
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURE
·Complementary to MPS8550SC.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
VCBO
Collector-Base Voltage 40 V
VCEO
Collector-Emitter Voltage 25 V
VEBO
Emitter-Base Voltage 5 V
IC
Collector Current 1,200 mA
PC *
Collector Power Dissipation 350 mW
Tj
Junction Te

2.1. mps8050s.pdf Size:391K _kec

SEMICONDUCTOR MPS8050S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURE
E
L B L
Complementary to MPS8550S.
DIM MILLIMETERS
_
A 2.93 0.20
+
B 1.30+0.20/-0.15
C 1.30 MAX
2
3 D 0.45+0.15/-0.05
E 2.40+0.30/-0.20
1
MAXIMUM RATING (Ta=25 ) G 1.90
H 0.95
J 0.13+0.10/-0.05
CHARACTERISTIC SYMBOL RATING UNIT
K 0.00 ~ 0.10
L 0.55
VCBO
Collector-Base

3.1. mps8050.pdf Size:45K _kec

SEMICONDUCTOR MPS8050
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION.
B C
FEATURE
·Complementary to MPS8550.
N DIM MILLIMETERS
A 4.70 MAX
E
K
B 4.80 MAX
G
MAXIMUM RATING (Ta=25℃)
C 3.70 MAX
D
D 0.45
CHARACTERISTIC SYMBOL RATING UNIT
E 1.00
F 1.27
VCBO
Collector-Base Voltage 40 V
G 0.85
H 0.45
VCEO
Collector-Emitter Voltage 25 V _
H
J 14.00

H8050 Datasheet (PDF)

1.1. lh8050qlt1g.pdf Size:211K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
LH8050PLT1G
Series
NPN Silicon
S-LH8050PLT1G
FEATURE Series
High current capacity in compact package.
IC =1.5A.
3
Epitaxial planar type.
NPN complement: LH8050
Pb-Free Package is available.
1
S- Prefix for Automotive and Other Applications Requiring Unique Site and
2
Control Change Requirements; AEC-Q101 Qualified and

1.2. lh8050plt1g.pdf Size:237K _lrc

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
LH8050PLT1G
Series
NPN Silicon
S-LH8050PLT1G
FEATURE
High current capacity in compact package.
Series
IC =1.5A.
Epitaxial planar type.
NPN complement: LH8050
3
Pb-Free Package is available.
S- Prefix for Automotive and Other Applications Requiring Unique Site and
1
Control Change Requirements; AEC-Q101 Qualified and PP

1.3. h8050s.pdf Size:130K _shantou-huashan

NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H8050S
█ APPLICATIONS
Audio Frequency Amplifier.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃ TO-92
Tj——Juncttion Temperature…………………………………150℃
PC——Collector Dissipation……………………

1.4. h8050.pdf Size:137K _shantou-huashan

Shantou Huashan Electronic Devices Co.,Ltd.
H8050
█ NPN EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃ TO-92
Tj——Juncttion Temperature…………………………………150℃
PC——Collector Dissipatio

1.5. h8050.pdf Size:788K _kexin

SMD Type Transistors
NPN Transistors
H8050
■ Features
1.70 0.1
● Collector Power Dissipation: PC=1W
● Collector Current: IC=1.5A
Comlementary to H8550
●
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector-base voltage VCBO 40 V
Collector-emitter voltage VCEO 25 V
Emitter-base voltage VEBO 5 V
C

L8050 Datasheet (PDF)

1.1. l8050.pdf Size:597K _blue-rocket-elect

1.2. l8050m.pdf Size:407K _blue-rocket-elect

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S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and

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KTC8050S Datasheet (PDF)

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S8050 Pin Description

Pin Number

Pin Name

Description

Current Drains out through emitter

Controls the biasing of transistor

Current flows in through collector

Features

Low Voltage, High Current NPN Transistor
Small Signal Transistor
Maximum Power: 2 Watts
Maximum DC Current Gain (hFE) is 400
Continuous Collector current (IC) is 700mA
Base- Emitter Voltage (VBE) is 5V
Collector-Emitter Voltage (VCE) is 20V
Collector-Base Voltage (VCB) is 30V
High Used in push-pull configuration doe Class B amplifiers
Available in To-92 Package

Note: Complete Technical Details can be found at the S8050 datasheet given at the end of this page.

Brief Description on S8050

S8050 is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin. It has a maximum gain value of 400; this value determines the amplification capacity of the transistor normally S8050. Since it is very high it is normally used for amplification purposes. However at a normal operating collector current the typical value of gain will be 110. The maximum amount of current that could flow through the Collector pin is 700mA, hence we cannot drive loads that consume more than 700mA using this transistor. To bias a transistor we have to supply current to base pin, this current (IB) should be limited to 5mA.

When this transistor is fully biased then it can allow a maximum of 700mA to flow across the collector and emitter. This stage is called Saturation Region and the typical voltage allowed across the Collector-Emitter (VCE) or Collector-Base (VCB) could be 20V and 30V respectively. When base current is removed the transistor becomes fully off, this stage is called as the Cut-off Region.

S8050 in Push-Pull Configuration

As mentioned in the features the S8050 transistor is commonly used in push pull configuration with Class B amplifier. So let us discuss how that is done.

A push pull amplifier, commonly known as Class B amplifier is type of multistage amplifier commonly used for audio amplification of loudspeakers. It is very simple to construct and requires two identical complimentary transistors operate. By complimentary it means that we need a NPN transistor and its equivalent PNP transistor. Like here the NPN transistor will be S8050 and its equivalent PNP transistor will be S8550. A simple circuit diagram of the Class B amplifier with the using the S8050 is shown below.

Applications

Audio Amplification Circuits
Class B Amplifiers
Push pull Transistors
Circuits where high gain is required
Low signal applications

2D model of the component

If you are designing a PCB or Perf board with this component then the following picture from the S8050 transistor Datasheet will be useful to know its package type and dimensions.